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MTA16ATF1G64AZ-2G1A2

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR4 component data sheets.
Component specifications are available at micron.com. Module speed grades correlate
with component speed grades, as shown below.
Table 13: Module and Component Speed Grades
DDR4 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G6 -075
-2G4 -083E
-2G3 -083
-2G1 -093E
-1G9 -107E
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level. Mi-
cron encourages designers to simulate the signal characteristics of the system's memo-
ry bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the edge connector of the module, not at the DRAM.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
8GB (x64, DR) 288-Pin DDR4 UDIMM
DRAM Operating Conditions
PDF: 09005aef85202c0f
atf16c1gx64az.pdf – Rev. F 4/16 EN
19
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 14: DDR4 I
DD
Specifications and Conditions – 8GB (Die Revision A)
Values are for the MT40A512M8 DDR4 SDRAM only and are computed from values specified in the 4Gb (512 Meg x 8) com-
ponent data sheet
Parameter Symbol 2400 2133 Units
One bank ACTIVATE-PRECHARGE current I
DD0
1
768 720 mA
One bank ACTIVATE-PRECHARGE, wordline boost, I
PP
current I
PP0
1
56 56 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1
800 760 mA
Precharge standby current I
DD2N
2
800 736 mA
Precharge standby ODT current I
DD2NT
1
720 672 mA
Precharge power-down current I
DD2P
2
512 480 mA
Precharge quite standby current I
DD2Q
2
656 624 mA
Active standby current I
DD3N
2
1072 1008 mA
Active standby I
PP
current I
PP3N
2
48 48 mA
Active power-down current I
DD3P
2
704 704 mA
Burst read current I
DD4R
1
1536 1440 mA
Burst read I
DDQ
current I
DDQ4R
1
576 528 mA
Burst write current I
DD4W
1
1696 1520 mA
Burst refresh current (1x REF) I
DD5B
1
1792 1760 mA
Burst refresh I
PP
current (1x REF) I
PP5B
1
200 200 mA
Self refresh current: Normal temperature range (0–85°C) I
DD6N
2
320 320 mA
Self refresh current: Extended temperature range (0–95°C) I
DD6E
2
432 432 mA
Self refresh current: Reduced temperature range (0–45°C) I
DD6R
2
160 160 mA
Auto self refresh current (25°C) I
DD6A
2
144 144 mA
Auto self refresh current (45°C) I
DD6A
2
160 160 mA
Auto self refresh current (75°C) I
DD6A
2
256 256 mA
Bank interleave read current I
DD7
1
1936 1720 mA
Bank interleave read I
PP
current I
PP7
1
136 120 mA
Maximum power-down current I
DD8
2
288 288 mA
Notes:
1. One module rank in the active I
DD/PP
, the other rank in I
DD2P/PP3N
.
2. All ranks in this I
DD/PP
condition.
8GB (x64, DR) 288-Pin DDR4 UDIMM
I
DD
Specifications
PDF: 09005aef85202c0f
atf16c1gx64az.pdf – Rev. F 4/16 EN
20
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 15: DDR4 I
DD
Specifications and Conditions – 8GB (Die Revision B)
Values are for the MT40A512M8 DDR4 SDRAM only and are computed from values specified in the 4Gb (512 Meg x 8) com-
ponent data sheet
Parameter Symbol 2666 2400 2133 Units
One bank ACTIVATE-PRECHARGE current I
DD0
1
792 72 656 mA
One bank ACTIVATE-PRECHARGE, wordline boost, I
PP
current I
PP0
1
48 48 48 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1
832 752 696 mA
Precharge standby current I
DD2N
2
800 720 672 mA
Precharge standby ODT current I
DD2NT
1
712 632 616 mA
Precharge power-down current I
DD2P
2
544 464 423 mA
Precharge quite standby current I
DD2Q
2
640 592 560 mA
Active standby current I
DD3N
2
1040 960 880 mA
Active standby I
PP
current I
PP3N
2
48 48 48 mA
Active power-down current I
DD3P
2
640 640 640 mA
Burst read current I
DD4R
1
1632 1392 1296 mA
Burst write current I
DD4W
1
1832 1632 1456 mA
Burst refresh current (1x REF) I
DD5B
1
1672 1632 1576 mA
Burst refresh I
PP
current (1x REF) I
PP5B
1
200 200 200 mA
Self refresh current: Normal temperature range (0–85°C) I
DD6N
2
288 288 288 mA
Self refresh current: Extended temperature range (0–95°C) I
DD6E
2
384 384 384 mA
Self refresh current: Reduced temperature range (0–45°C) I
DD6R
2
192 192 192 mA
Auto self refresh current (25°C) I
DD6A
2
144 144 144 mA
Auto self refresh current (45°C) I
DD6A
2
192 192 192 mA
Auto self refresh current (75°C) I
DD6A
2
288 288 288 mA
Bank interleave read current I
DD7
1
1872 1752 1536 mA
Bank interleave read I
PP
current I
PP7
1
152 136 120 mA
Maximum power-down current I
DD8
2
256 256 256 mA
Notes:
1. One module rank in the active I
DD/PP
, the other rank in I
DD2P/PP3N
.
2. All ranks in this I
DD/PP
condition.
8GB (x64, DR) 288-Pin DDR4 UDIMM
I
DD
Specifications
PDF: 09005aef85202c0f
atf16c1gx64az.pdf – Rev. F 4/16 EN
21
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24

MTA16ATF1G64AZ-2G1A2

Mfr. #:
Buy MTA16ATF1G64AZ-2G1A2
Manufacturer:
Micron
Description:
IC SDRAM DDR4 8GB UDIMM FBGA
Lifecycle:
New from this manufacturer.
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