UMF6NTR Datasheet UMF6NTR | P1-P3

UMF6N

Transistors

1/5

Power management (dual transistors)

UMF6N

2SA2018 and 2SK3019 are housed independently in a UMT package.

!

!!

!Application

Power management circuit

!

!!

!Features

1) Power switching circuit in a single package.

2) Mounting cost and area can be cut in half.

!

!!

!Structure

Silicon epitaxial planar transistor

!

!!

!Equivalent circuits

Tr2

Tr1

(1)(2)(3)

(4) (5) (6)

!

!!

!Packaging specifications

UMF6N

UMT6

F6

TR

3000

Type

Package

Marking

Code

Basic ordering unit (pieces)

!

!!

!External dimensions (Units : mm)

ROHM : UMT6

EIAJ : SC-88

0

~

0.1

(

6

)

2.0

1.3

0.9

0.15

0.7

0.1Min.

2.1

0.65

0.2

1.25

(

1

)

0.65

(

4

)

(

3

)

(

2

)

(

5

)

Each lead has same dimensions

UMF6N

Transistors

2/5

!

!!

!Absolute maximum ratings (Ta=25°C)

Tr1

Parameter Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

Tj

Tstg

Limits

−15

−12

−6

−500

150(TOTAL)

150

−55~+150

−1.0

∗1

∗2

Unit

V

mA

A

mW

°C

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

∗1 Single pulse P

W

=1ms

∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

Tr2

Parameter

∗1 PW≤10ms Duty cycle≤50%

∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

Symbol

V

DSS

V

GSS

I

D

I

DRP

P

D

Tch

Tstg

Limits

30

±20

100

200

150(TOTAL)

150

−55~+150

∗1

∗2

Unit

V

mA

I

DP

200 mA

mA

I

DR

100 mA

mW

°C

Drain-source voltage

Gate-source voltage

Drain current

Reverse drain

current

Total power dissipation

Channel temperature

Range of storage temperature

Continuous

Pulsed

!

!!

!Electrical characteristics (Ta=25°C)

Tr1

Parameter Symbol Min. Typ. Max. Unit Conditions

V

CB

=−10V, I

E

=0mA, f=1MHz

Transition frequency

f

T

−

260

−

MHz

V

CE

=−2V, I

E

=10mA, f=100MHz

BV

CEO

−12

−−

V

I

C

=−1mA

Collector-emitter breakdown voltage

BV

CBO

−15

−−

V

I

C

=−10µA

Collector-base breakdown voltage

BV

EBO

−6

−−

V

I

E

=−10µA

Emitter-base breakdown voltage

I

CBO

−−

−100

nA V

CB

=−15V

Collector cut-off current

I

EBO

−−

−100

nA V

EB

=−6V

Emitter cut-off current

V

CE(sat)

−−100

−250 mV

I

C

=−200mA, I

B

=−10mA

Collector-emitter saturation voltage

h

FE

270 − 680

− V

CE

=−2V, I

C

=−10mA

DC current gain

Cob − 6.5 −

pF

Collector output capacitance

Tr2

Parameter

Symbol

Min. Typ. Max. Unit Conditions

Input capacitance

C

iss

−

13

−

pF

V

DS

=5V, V

GS

=0V, f=1MHz

I

GSS

−−

±1 µA

V

GS

=±20V, V

DS

=0V

Gate-source leakage

V

(BR)DSS

30

−−

V

I

D

=10µA, V

GS

=0V

I

DSS

−−

1.0 µA

V

DS

=30V, V

GS

=0V

Zero gate voltage drain current

Drain-source breakdown voltage

V

GS(th)

0.8

−

1.5

VV

DS

=3V, I

D

=100µA

Gate-threshold voltage

R

DS(on)

−

58Ω

I

D

=10mA, V

GS

=4V

−

713Ω

I

D

=1mA, V

GS

=2.5V

Static drain-source

on-state resistance

C

oss

−

9

− pF

Output capacitance

|Y

fs

|

20

−−ms V

DS

=3V, I

D

=10mA

Forward transfer admittance

C

rss

−

4

− pF

Reverce transfer capacitance

Rise time

t

r

−

35

−

ns

t

d(off)

−

80

− ns

Turn-off delay time

t

d(on)

−

15

− ns

I

D

=10mA, V

DD

5V,

V

GS

=5V, R

L

=500Ω,

R

GS

=10Ω

Turn-on delay time

t

f

−

80

− ns

Fall time

UMF6N

Transistors

3/5

!

!!

!Electrical characteristic curves

Tr1

0

1

100

1000

10

BASE TO EMITTER VOLTAGE : V

BE

(V)

COLLECTOR CURRENT : I

C

(mA)

1.41.0 1.20.4 0.6 0.80.2

V

CE

=2V

Pulsed

Ta=125°C

Ta=25°C

Ta= −40°C

Fig.1 Grounded emitter propagation

characteristics

1 10 100 1000

COLLECTOR CURRENT : I

C

(mA)

1

DC CURRENT GAIN : h

FE

10

1000

100

Ta=125°C

Ta=−40°C

Ta=25°C

V

CE

=2V

Pulsed

Fig.2 DC current gain vs.

collector current

1 10 100 1000

COLLECTOR CURRENT : I

C

(mA)

1

COLLECTOR SATURATION VOLTAGE : VCE(sat)

(mV)

10

1000

100

Ta=25°C

Pulsed

I

C

/I

B

=50

I

C

/I

B

=20

I

C

/I

B

=10

Fig.3 Collector-emitter saturation voltage

vs. collector current ( Ι )

1 10 100 1000

COLLECTOR CURRENT : I

C

(mA)

1

COLLECTOR SATURATION VOLTAGE : VCE (sat)

(V)

10

1000

100

Ta=25°C

Ta=−40°C

Ta=125°C

I

C

/I

B

=20

Pulsed

Fig.4 Collector-emitter saturation voltage

vs. collector current ( ΙΙ )

1 10 100 1000

COLLECTOR CURRENT : I

C

(mA)

10

BASER SATURATION VOLTAGE : V

BE (sat)

(mV)

100

10000

1000

Ta=25°C

Ta=−40°C

Ta=125°C

I

C

/I

B

=20

Pulsed

Fig.5 Base-emitter saturation voltage

vs. collector current

1 10 100 1000

EMITTER CURRENT : I

E

(mA)

1

TRANSITION FREQUENCY : f

T

(MHz)

10

1000

100

V

CE

=2V

Ta=25°C

Pulsed

Fig.6 Gain bandwidth product

vs. emitter current

1 10 1000.1

1

10

100

1000

Ta

=

25°C

f

=

1MHz

I

E

=

0A

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

EB

(

V)

Cib

Cob

Fig.7 Collector output capacitance

vs. collector-base voltage

Emitter input capacitance

vs. emitter-base voltage

0.01 0.1 1 10 100

EMITTER CURRENT : V

CE

(V)

0.001

TRANSITION FREQUENCY : I

C

(A)

0.01

10

0.1

1

Ta=25°C

Single Pulsed

DC

100ms

10ms

1ms

Fig.8 Safe operation area

UMF6NTR

UMF6NTR

Products related to this Datasheet