UMF6N
Transistors
4/5
Tr2
012345
0
0.05
0.1
0.15
DRAIN CURRENT : ID (A)
DRAIN-SOURCE VOLTAGE : VDS (V)
3V
3.5V
2.5V
VGS=1.5V
4V
2V
Ta=25°C
Pulsed
Fig.9 Typical output characteristics
04
0.1m
100m
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : V
GS
(V)
1
10m
3
2
1m
0.2m
0.5m
2m
5m
50m
20m
200m
Ta=125°C
75°C
25°C
−25°C
V
DS
=3V
Pulsed
Fig.10 Typical transfer characteristics
−50 0
0
1
1.5
2
GATE THRESHOLD VOLTAGE : V
GS(th)
(V)
CHANNEL TEMPERATURE : Tch (°C)
0.5
−25 25 50 75 100 125 150
Fig.11 Gate threshold voltage vs.
channel temperature
V
DS
=3V
I
D
=0.1mA
Pulsed
0.001
1
2
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
DRAIN CURRENT : I
D
(A)
0.5
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
5
10
20
Fig.12 Static drain-source on-state
resistance vs. drain current ( Ι )
Ta=125°C
75°C
25°C
−25°C
V
GS
=4V
Pulsed
0.001
1
2
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
DRAIN CURRENT : I
D
(A)
0.5
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
5
10
20
Fig.13 Static drain-source on-state
resistance vs. drain current ( ΙΙ )
Ta=125°C
75°C
25°C
−25°C
V
GS
=2.5V
Pulsed
0 5 10 15 20
0
5
10
15
GATE-SOURCE VOLTAGE : VGS (V)
ID=0.1A
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on) (Ω)
Fig.14 Static drain-source on-state
resistance vs. gate-source
voltage
Ta=25°C
Pulsed
ID=0.05A
−50 0 25 150
0
3
6
9
CHANNEL TEMPERATURE : Tch (°C)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
−25 50 75 100 125
2
1
4
5
7
8
Fig.15 Static drain-source on-state
resistance vs. channel temperature
V
GS
=4V
Pulsed
I
D
=100mA
I
D
=50mA
0.0001
0.001
0.01
0.02
0.5
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
DRAIN CURRENT : I
D
(A)
0.005
0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05
0.05
0.1
0.2
0.1 0.2 0.5
0.002
Ta=−25°C
25°C
75°C
125°C
V
DS
=3V
Pulsed
Fig.16 Forward transfer admittance vs.
drain current
200m
REVERSE DRAIN CURRENT : I
DR
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
1.510.50
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
Fig.17 Reverse drain current vs.
source-drain voltage ( Ι )
V
GS
=0V
Pulsed
Ta=125°C
75°C
25°C
−25°C
