LT1768
13
APPLICATIONS INFORMATION
WUU
U
voltage and DIO lines can cause enough current flow to
fool the open lamp detection. In situations where coupling
can’t be avoided, resistors can be added from the DIO pins
to ground to increase the open lamp threshold. When
resistors from the DIO pins to ground are added, the
values for R
RMAX
and R
RMIN
may need to be increased
from their nominal values to compensate for the additional
current.
For single lamp operation, the lowside of the lamp should
be connected to both DIO pins, and the values of R
RMAX
and R
RMIN
increased to two times the values that would be
used in a dual lamp configuration. In single lamp mode all
fault detection will operate as in the dual lamp configura-
tion, but the open lamp threshold will double. If the
increase in the open lamp threshold is not acceptable, a
positive offset current can be added to reduce the open
lamp threshold by placing a resistor between the REF and
DIO pins (a 33k resistor will reduce the open lamp thresh-
old by approximately 100µA ((V
REF
V
DIO
+
)/33k). When
an offset current is added, the values for R
RMAX
and R
RMIN
may need to be increased from their nominal values to
compensate for the offset current.
VC Compensation
As previously mentioned a single capacitor on the VC pin
combines the error signal conversion, lamp current aver-
aging and frequency compensation. Careful consideration
should be given to the value of capacitance used. A large
value (1µF) will give excellent stability at high lamp cur-
rents but will result in degraded line regulation in PWM
mode. On the other hand , a small value (10nF) will give
excellent PWM response but might result in overshoot and
poor load regulation. The value chosen will depend on the
maximum load current and dimming range. After these
parameters are decided upon, the value of the VC capacitor
should be increased until the line regulation becomes
unacceptable. A typical value for the VC capacitor is
0.033µF. For further information on compensation please
refer to the references or consult the factory.
Current Sense Comparator
The LT1768 is a current mode PWM controller. Under
normal operating conditions the GATE is driven high at the
start of every oscillator cycle. The GATE is driven back low
when the current reaches a threshold level proportional to
the voltage on the VC pin. The GATE then remains low until
the start of the next oscillator cycle. The peak current is
thus proportional to the VC voltage and controlled on a
cycle by cycle basis. The peak switch current is normally
sensed by placing a sense resistor in the source lead of the
output MOSFET. This resistor converts the switch current
to a voltage that can be compared to a fraction of the VC
voltage [(V
VC
– V
DIODE
)/30] . For normal conditions and a
GATE duty cycle below 50%, the switch current limit will
correspond to I
PK
= 0.1/R
SENSE
. For GATE duty cycles
above 50% the switch current limit will be reduced
to approximately 90mV at 80% duty cycle to avoid
subharmonic oscillations associated with current mode
controllers.
When the lamp current is programmed to PWM mode, the
VC pin will slew between voltages that represent the
minimum and maximum PWM lamp currents. The slew
time affects the line regulation at low duty cycle, and
should be kept low by making the sense resistor as small
as possible. The lowest value of sense resistor is deter-
mined by switching transients and other noise due to
layout configurations. A good rule of thumb is to set the
sense resistor so that the voltage on the VC pin equals
2.5V when the PWM current is in maximum mode (V
PROG
= V
PWM
). Typical values of the sense resistor run in the
25m to 50m range for large displays, and can be
implemented with a copper trace on the PCB.
Since the maximum threshold at the SENSE pin is only
100mV, switching transients and other noise can prema-
turely trip the comparator. The LT1768 has a blanking
period of 100ns which prohibits premature switch turn
off, but further filtering the sense resistor voltage is
recommended. A simple RC filter is adequate for most
applications. (Figure 5.)
Figure 5. Sense Pin Filter
SENSE
GATE
LT1768
100
2.2nF
0.025m
1768 •F05
LT1768
14
up current source. The LT1768 thermal shutdown tem-
perature is set at 160°C. A buffered version of the internal
5V is present at the V
REF
pin and is capable of supplying up
to 10mA of current. Note that using any substantial
amount of current from the V
REF
pin will increase power
dissipation in the device, which will reduce the useful
operating ambient temperature range.
Supply and Input Voltage Sequencing
For most applications, where the SHDN pin is left floating,
and the voltages on the PWM and PROG pins are derived
from the V
REF
pin, the LT1768 will power-up and power-
down correctly when the voltage to the V
IN
pin is applied
and removed. In applications where the voltage inputs for
the V
IN
pin, SHDN pin, PWM pin, and the PROG pin
originate from different sources (power supply, micropro-
cessors etc.), care must be taken during power up/down
sequences. For proper operation during the power-up
sequence, the voltage on the following pins must be taken
from zero to their appropriate values in the following
order; V
IN
pin, SHDN pin, PWM pin and PROG pin. For
proper operation during the power-down sequence, the
order must be reversed. For example, in the circuit of
Figure 1 where the SHDN pin is left floating, and the PWM
pin voltage is derived from a resistor divider to the V
REF
pin, the proper power-up sequence would be to take the
V
IN
pin from zero to its value then apply either a voltage or
PWM signal to the PROG pin. The power-down sequence
for the circuit in Figure 1 would be to take the PROG pin
voltage to zero, then take the V
IN
pin voltage to zero.If the
PROG voltage in the circuit of Figure 1 is present before the
V
IN
supply voltage, proper power supply sequecing can be
achieved by implementing the circuit shown in Figure 7.
APPLICATIONS INFORMATION
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1768 • G06
PGND
GATE
BAT 85
LT1768
GATE
The LT1768 has a single high current totem pole output
stage. This output stage is capable of driving up to ±1.5A
of output current. Cross-conduction current spikes in the
totem pole output have been eliminated. The GATE pin is
intended to drive an N-channel MOSFET switch. Rise and
fall times are typically 50ns with a 3000pF load. A clamp
is built into the device to prevent the GATE pin from rising
above 13V in order to protect the gate of the MOSFET
switch.
The GATE pin connects directly to the emitter of the upper
NPN drive transistor and the collector of the lower NPN
drive transistor in the totem pole. The collector of the lower
transistor, which is N-type silicon, forms a P-N junction
with the substrate of the device. This junction is reversed
biased during normal operation.
In some applications the parasitic LC of the external
MOSFET gate can ring and pull the GATE pin below
ground. If the GATE pin is pulled negative by more than a
diode drop the parasitic diode formed by the collector of
the GATE NPN and the substrate will turn on. This can
cause erratic operation of the device. In these cases a
Schottky clamp diode is recommended from the GATE pin
to ground. (Figure 6.)
Figure 6. Schottky Gate Clamp
49.9k
10k
10µF
0 TO 5V
OR
1kHz PWM
VN2222LL
1768 F07
V
IN
PROG
LT1768
Figure 7. Circuit Insures Proper Supply Sequencing When
Dimming Voltage Exists Before Main Power Supply
Reference
The internal reference of the LT1768 is a trimmed bandgap
reference. The reference is used to power the majority of
the LT1768 internal circuitry. The reference is inactive if
the LT1768 is in undervoltage lockout, shutdown mode, or
thermal shutdown. The undervoltage lockout is active
when V
IN
is below 7.9V and the LT1768 is in shutdown
mode when the voltage on the SHDN pin is pulled below
1V. The SHDN pin has 200mV of hysteresis and a 7µA pull-
LT1768
15
APPLICATIONS INFORMATION
WUU
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together with minimum trace between them. If space
constraints prohibit the transformer T1 placement next to
C1, local bypassing (C2) for the center tap of transformer
T1 should be used.
Special attention is also required for the layout of the high
voltage section to avoid any unpleasant surprises. Please
refer to the references for an extensive discussion on high
voltage layout techniques.
Applications Support
Linear Technology invests an enormous amount of time,
resources, and technical expertise in understanding, de-
signing and evaluating backlight solutions for systems
designers. The design of an efficient and compact back-
light system is a study of compromise in a transduced
electronic system. Every aspect of the design is interre-
lated and any design change requires complete re-evalu-
ation for all other critical design parameters. Linear
Technology has engineered one of the most complete test
and evaluation setups for backlight designs and under-
stands the issues and trade-offs in achieving a compact,
efficient and economical customer solution. Linear Tech-
nology welcomes the opportunity to discuss, design,
evaluate, and optimize any backlight system with a cus-
tomer. For further information on backlight designs, con-
sult the references below.
References
1. Williams, Jim. November 1995. A Fourth Generation of
LCD Backlight Technology. Linear Technology Corpora-
tion, Application Note 65.
1768 F08
C1
D1
L1
T1
V
IN
C2
*OPTIONAL
BOLD LINES INDICATE
HIGH CURRENT PATHS
LT1768
GATE
PGND
V
IN
SENSE
Figure 8
Supply Bypass and Layout Considerations
Proper supply bypassing and layout techniques must be
used to insure proper regulation, avoid display flicker, and
insure long term reliability.
Figure 8 shows the application’s critical high current paths
in thick lines. Ideally, all components in the high current
path should be placed as close as possible and connected
with short thick traces. The most critical consideration is
that T1’s center tap, the Schottky diode D1, LT1768’s V
IN
pin, and a low ESR capacitor (C1) be connected directly

LT1768CGN#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Switching Voltage Regulators Hi Pwr CCFL Cntr for Wide Dimming Rng &
Lifecycle:
New from this manufacturer.
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