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VS-GB70LA60UF

P1-P3P4-P6P7-P9
VS-GB70LA60UF
www.vishay.com
Vishay Semiconductors
Revision: 01-Feb-12
1
Document Number: 93104
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
"Low Side Chopper" IGBT SOT-227
(Warp 2 Speed IGBT), 70 A
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
•Square RBSOA
•Low V
CE(on)
•FRED Pt
®
hyperfast rectifier
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Higher switching frequency up to 150 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
PRODUCT SUMMARY
V
CES
600 V
I
C
DC 70 A at 88 °C
V
CE(on)
typical at 70 A, 25 °C 2.23 V
I
F
DC 70 A at 86 °C
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
600 V
Continuous collector current I
C
T
C
= 25 °C 111
A
T
C
= 80 °C 76
Pulsed collector current I
CM
120
Clamped inductive load current I
LM
120
Diode continuous forward current I
F
T
C
= 25 °C 113
T
C
= 80 °C 75
Peak diode forward current I
FM
200
Gate to emitter voltage V
GE
± 20 V
Power dissipation, IGBT P
D
T
C
= 25 °C 447
W
T
C
= 80 °C 250
Power dissipation, diode P
D
T
C
= 25 °C 236
T
C
= 80 °C 132
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V
VS-GB70LA60UF
www.vishay.com
Vishay Semiconductors
Revision: 01-Feb-12
2
Document Number: 93104
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown
voltage
V
BR(CES)
V
GE
= 0 V, I
C
= 1 mA 600 - -
V
Collector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 35 A - 1.69 1.88
V
GE
= 15 V, I
C
= 70 A - 2.23 2.44
V
GE
= 15 V, I
C
= 35 A, T
J
= 125 °C - 2.07 2.31
V
GE
= 15 V, I
C
= 70 A, T
J
= 125 °C - 2.89 3.21
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 500 μA 3 3.9 5
Temperature coefficient of
threshold voltage
V
GE(th)
/T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C) - - 9 - mV/°C
Collector to emitter leakage current I
CES
V
GE
= 0 V, V
CE
= 600 V - 1 100 μA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C - 0.07 2.0 mA
Diode reverse breakdown voltage V
BR
I
R
= 1 mA 600 - - V
Diode forward voltage drop V
FM
I
C
= 35 A, V
GE
= 0 V - 1.8 2.33
V
I
C
= 70 A, V
GE
= 0 V - 2.13 2.71
I
C
= 35 A, V
GE
= 0 V, T
J
= 125 °C - 1.35 1.81
I
C
= 70 A, V
GE
= 0 V, T
J
= 125 °C - 1.7 2.32
Diode reverse leakage current I
RM
V
R
= V
R
rated - 0.1 50 μA
T
J
= 125 °C, V
R
= V
R
rated - 0.01 3 mA
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 200 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 50 A, V
CC
= 400 V, V
GE
= 15 V
- 320 -
nCGate to emitter charge (turn-on) Q
ge
-42-
Gate to collector charge (turn-on) Q
gc
- 110 -
Turn-on switching loss E
on
I
C
= 70 A, V
CC
= 360 V,
V
GE
= 15 V, R
g
= 5 
L = 500 μH, T
J
= 25 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
-1.15-
mJ
Turn-off switching loss E
off
-1.16-
Total switching loss E
tot
-2.31-
Turn-on switching loss E
on
I
C
= 70 A, V
CC
= 360 V,
V
GE
= 15 V, R
g
= 5 
L = 500 μH, T
J
= 125 °C
-1.27-
Turn-off switching loss E
off
-1.28-
Total switching loss E
tot
-2.55-
Turn-on delay time t
d(on)
- 208 -
ns
Rise time t
r
-69-
Turn-off delay time t
d(off)
- 208 -
Fall time t
f
- 100 -
Reverse bias safe operating area RBSOA
T
J
= 150 °C, I
C
= 120 A, R
g
= 22 
V
GE
= 15 V to 0 V, V
CC
= 400 V,
V
P
= 600 V
Fullsquare
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs, V
R
= 200 V
-5993ns
Diode peak reverse current I
rr
-46A
Diode recovery charge Q
rr
- 118 279 nC
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs,
V
R
= 200 V, T
J
= 125 °C
- 130 159 ns
Diode peak reverse current I
rr
-1113A
Diode recovery charge Q
rr
- 715 995 nC
VS-GB70LA60UF
www.vishay.com
Vishay Semiconductors
Revision: 01-Feb-12
3
Document Number: 93104
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - IGBT Reverse Bias SOA
T
J
= 150 °C, V
GE
= 15 V
Fig. 3 - Typical IGBT Collector Current Characteristics
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature
range
T
J
, T
Stg
- 40 - 150 °C
Thermal resistance, junction to case
IGBT
R
thJC
- - 0.28
°C/WDiode - - 0.53
Thermal resistance, case to sink per module R
thCS
-0.05-
Mounting torque, 6-32 or M3 screw - - 1.3 Nm
Weight -30-g
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
0 20406080 120100
0
160
100
120
140
20
40
60
80
I
C
(A)
V
CE
(V)
1 10 100 1000
0.01
0.1
1
1000
10
100
I
C
(A)
V
CE
(V)
024135
0
200
25
50
100
75
150
125
175
T
J
= 125 °C
T
J
= 25 °C
I
CES
(mA)
V
CES
(V)
100 200 300 400 500 600
0.0001
1
0.01
0.1
0.001
T
J
= 125 °C
T
J
= 25 °C
P1-P3P4-P6P7-P9

VS-GB70LA60UF

Mfr. #:
Buy VS-GB70LA60UF
Manufacturer:
Vishay
Description:
IGBT 600V 111A 447W SOT-227
Lifecycle:
New from this manufacturer.
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