VS-GB70LA60UF
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Vishay Semiconductors
Revision: 01-Feb-12
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Document Number: 93104
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Fig. 5 - Typical IGBT Threshold Voltage
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction
Temperature, V
GE
= 15 V
Fig. 7 - Maximum DC Forward Current vs. Case Temperature
Fig. 8 - Typical Diode Forward Characteristics
Fig. 9 - Typical IGBT Energy Loss vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 360 V,
R
g
= 5 , V
GE
= 15 V
Fig. 10 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 360 V,
R
g
= 5 , V
GE
= 15 V
V
geth
(V)
I
C
(mA)
0.0002 0.0004 0.0006 0.0008 0.001
2.0
4.5
3.0
3.5
4.0
2.5
T
J
= 25 °C
T
J
= 125 °C
V
CE
(V)
T
J
(°C)
10 50 9030 70 130110 150
1
4
3
2
100 A
70 A
35 A
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
020 60 10040 80 120
0
160
100
120
140
20
40
60
80
I
F
(A)
V
FM
(V)
0 0.5 1.51.0 2.0 2.5 3.0 3.5
0
200
25
75
100
150
125
175
50
T
J
= 125 °C
T
J
= 25 °C
Energy (mJ)
I
C
(A)
0 20406080
0.00
1.50
0.50
1.00
0.75
1.25
0.25
E
off
E
on
Switching Time (ns)
I
C
(A)
010 7030 50 604020 80
10
1000
100
t
d(off)
t
d(on)
t
f
t
r
