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SBC807-40LT1G

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 1997
October, 2016 − Rev. 14
Publication Order Number:
BC807−16LT1/D
1
BC807-16L, BC807-25L,
BC807-40L
General Purpose
Transistors
PNP Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
CEO
−45 V
Collector − Base Voltage V
CBO
−50 V
Emitter − Base Voltage V
EBO
−5.0 V
Collector Current − Continuous I
C
−500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 6
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
See detailed ordering and shipping information on page 2 o
f
this data sheet.
ORDERING INFORMATION
1
5xx M G
G
5xx = Device Code
xx = A1, B1, or C
M = Date Code*
G = Pb−Free Package
MARKING DIAGRAM
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
www.onsemi.com
BC807−16L, BC807−25L, BC807−40L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −10 mA)
V
(BR)CEO
−45 − − V
Collector−Emitter Breakdown Voltage
(V
EB
= 0, I
C
= −10 mA)
V
(BR)CES
−50 − − V
Emitter−Base Breakdown Voltage
(I
E
= −1.0 mA)
V
(BR)EBO
−5.0 − − V
Collector Cutoff Current
(V
CB
= −20 V)
(V
CB
= −20 V, T
J
= 150°C)
I
CBO
−
−
−
−
−100
−5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(I
C
= −100 mA, V
CE
= −1.0 V) BC807−16, SBC80−16L
BC807−25, SBC807−25L
BC807−40, SBC807−40L
(I
C
= −500 mA, V
CE
= −1.0 V)
h
FE
100
160
250
40
−
−
−
−
250
400
600
−
−
Collector−Emitter Saturation Voltage
(I
C
= −500 mA, I
B
= −50 mA)
V
CE(sat)
− − −0.7 V
Base−Emitter On Voltage
(I
C
= −500 mA, V
CE
= −1.0 V)
V
BE(on)
− − −1.2 V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mA, V
CE
= −5.0 Vdc, f = 100 MHz)
f
T
100 − − MHz
Output Capacitance
(V
CB
= −10 V, f = 1.0 MHz)
C
obo
− 10 − pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device Specific Marking Package Shipping
†
BC807−16LT1G
5A1
SOT−23
(Pb−Free)
3000 / Tape & Reel
SBC807−16LT1G*
BC807−16LT3G
5A1 10,000 / Tape & Reel
SBC807−16LT3G*
BC807−25LT1G
5B1 3000 / Tape & Reel
SBC807−25LT1G*
BC807−25LT3G
5B1 10,000 / Tape & Reel
SBC807−25LT3G*
BC807−40LT1G
5C 3000 / Tape & Reel
SBC807−40LT1G*
BC807−40LT3G
5C 10,000 / Tape & Reel
SBC807−40LT3G*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
BC807−16L, BC807−25L, BC807−40L
www.onsemi.com
3
TYPICAL CHARACTERISTICS − BC807−16LT1
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
500
10.10.010.001
0.01
0.1
1
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1
V
CE
= 1 V
150°C
−55°C
25°C
I
C
/I
B
= 10
150°C
−55°C
25°C
0.4
0.9
I
C
/I
B
= 10
150°C
−55°C
25°C
0.4
0.7
1.1
V
CE
= 5 V
150°C
−55°C
25°C
P1-P3P4-P6P7-P9P10-P10

SBC807-40LT1G

Mfr. #:
Buy SBC807-40LT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS GP XSTR SPCL TR
Lifecycle:
New from this manufacturer.
Delivery:
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