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NGD8209NT4G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 0
1 Publication Order Number:
NGD8209N/D
NGD8209N
Ignition IGBT 12 A, 410 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include motorbike ignition, Direct Fuel Injection, or wherever high
voltage and high current switching is required.
Features
• Ideal for Coil−on−Plug Applications
• DPAK Package Offers Smaller Footprint and Increased Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Low Saturation Voltage
• High Pulsed Current Capability
• These are Pb−Free Devices
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage V
CES
445 V
DC
Collector−Gate Voltage V
CER
445 V
DC
Gate−Emitter Voltage V
GE
15 V
DC
Collector Current−Continuous
@ T
C
= 25°C − Pulsed
I
C
12
30
A
DC
A
AC
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 800 V
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
94
0.63
Watts
W/°C
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
12 AMPS
410 VOLTS
V
CE(on)
3 2.0 V @
I
C
= 6.0 A, V
GE
. 4.0 V
DPAK
CASE 369C
STYLE 7
http://onsemi.com
1
2
3
4
C
E
G
R
G
R
GE
MARKING DIAGRAM
Y = Year
WW = Work Week
G = Pb−Free Device
1
Gate
4
Collector
2
Collector
3
Emitter
YWW
NGD
8209G
Device Package Shipping
†
ORDERING INFORMATION
NGD8209NT4G DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NGD8209N
http://onsemi.com
2
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS
Characteristic Symbol Value Unit
Single Pulse Collector−to−Emitter Avalanche Energy
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 7.4 A, L = 10 mH, Starting T
J
= 25°C
E
AS
274
mJ
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case R
θ
JC
1.6 °C/W
Thermal Resistance, Junction to Ambient (Note 1) R
θ
JA
105
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T
L
275 °C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage BV
CES
I
C
= 2.0 mA T
J
= −40°C to
150°C
380 410 435 V
DC
I
C
= 10 mA T
J
= −40°C to
150°C
390 420 445
Zero Gate Voltage Collector Current I
CES
V
CE
= 350 V,
V
GE
= 0 V
T
J
= 25°C − 1.0 25
μA
DC
T
J
= 150°C − 9.0 50
T
J
= −40°C − 0.5 15
Reverse Collector−Emitter Leakage Current I
ECS
V
CE
= −24 V
T
J
= 25°C − 0.5 1.0
mA
T
J
= 150°C − 10 30
T
J
= −40°C − 0.05 0.5
Reverse Collector−Emitter Clamp Voltage B
VCES(R)
I
C
= −75 mA
T
J
= 25°C 26 33 38
V
DC
T
J
= 150°C 29 36 41
T
J
= −40°C 24 32 36
Gate−Emitter Clamp Voltage BV
GES
I
G
= 5.0 mA T
J
= −40°C to
150°C
10 13 16 V
DC
Gate−Emitter Leakage Current I
GES
V
GE
= 10 V T
J
= −40°C to
150°C
380 635 1000 μA
DC
Gate Resistor R
G
− T
J
= −40°C to
150°C
− 70 −
Ω
Gate Emitter Resistor R
GE
− T
J
= −40°C to
150°C
10 16 26
k
Ω
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GE(th)
I
C
= 1.0 mA,
V
GE
= V
CE
T
J
= 25°C 1.0 1.42 2.0
V
DC
T
J
= 150°C 0.7 0.95 1.5
T
J
= −40°C 1.1 1.62 2.2
Threshold Temperature Coefficient
(Negative)
− − − − 3.5 − mV/°C
2. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
NGD8209N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
Symbol Test Conditions Temperature Min Typ Max Unit
ON CHARACTERISTICS (continued) (Note 3)
Collector−to−Emitter On−Voltage
V
CE(on)
I
C
= 6.0 A,
V
GE
= 4.0 V
T
J
= 25°C 0.8 1.45 2.0
V
DC
T
J
= 150°C 0.85 1.44 1.85
T
J
= −40°C 1.0 1.5 1.95
I
C
= 10 A,
V
GE
= 4.5 V
T
J
= 25°C 1.1 1.79 2.3
T
J
= 150°C 1.2 1.9 2.2
T
J
= −40°C 1.3 1.77 2.2
Forward Transconductance gfs V
CE
= 5.0 V, I
C
= 6.0 A T
J
= −40°C to
150°C
5.0 14 30 Mhos
3. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics Figure 2. Output Characteristics
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V) V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
98654210
0
10
20
30
40
50
60
97654210
0
10
20
30
40
50
60
70
Figure 3. Output Characteristics Figure 4. Transfer Characteristics
V
GE
, GATE TO EMITTER VOLTAGE (V)
4.54.03.02.52.01.00.50
0
5
10
15
20
25
30
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)I
C
, COLLECTOR CURRENT (A)
3710
T
J
= 25°C
2.5 V
3.0 V
4.0 V
5.0 V
3810
T
J
= −40°C
2.5 V
3.0 V
4.0 V
5.0 V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
98654210
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (A)
3710
T
J
= 150°C
2.5 V
3.0 V
4.0 V
5.0 V
1.5 3.5 5.0
V
CE
= 10 V
−40°C
25°C
150°C
P1-P3P4-P5

NGD8209NT4G

Mfr. #:
Buy NGD8209NT4G
Manufacturer:
Littelfuse
Description:
IGBT Transistors IGNITION IGBT 12A 410V
Lifecycle:
New from this manufacturer.
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