NGD8209NT4G

NGD8209N
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 5. CollectortoEmitter Saturation
Voltage vs. Junction Temperature
Figure 6. CollectortoEmitter Voltage vs.
GatetoEmitter Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
GE
, GATE TO EMITTER VOLTAGE (V)
1251005002550
0
0.25
0.75
1.00
1.25
1.50
2.00
10987654
0
0.25
0.50
0.75
1.25
1.50
1.75
2.00
Figure 7. CollectortoEmitter Voltage vs.
GatetoEmitter Voltage
Figure 8. Gate Threshold Voltage vs. Junction
Temperature
V
GE
, GATE TO EMITTER VOLTAGE (V) T
J
, JUNCTION TEMPERATURE (°C)
10987654
0
0.25
0.50
0.75
1.00
1.50
1.75
2.00
13090703010103050
0
0.2
0.6
0.8
1.2
1.4
1.8
2.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
GE(th)
, GATE THRESHOLD VOLTAGE (V)
25 75 150
0.50
1.75
V
GE
= 5 V
IC = 3 A
IC = 5 A
IC = 8 A
IC = 10 A
1.00
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
J
= 25°C
IC = 3 A
IC = 5 A
IC = 8 A
IC = 10 A
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1.25
T
J
= 150°C
IC = 3 A
IC = 5 A
IC = 8 A
IC = 10 A
50 110 150
0.4
1.0
1.6
NGD8209N
http://onsemi.com
5
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
b
D
E
b3
L3
L4
b2
e
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
A 0.086 0.094 2.18 2.38
b 0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c 0.018 0.024 0.46 0.61
e 0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L 0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12 3
4
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒ
mm
inches
Ǔ
SCALE 3:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H 0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2
GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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NGD8209N/D
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NGD8209NT4G

Mfr. #:
Manufacturer:
Littelfuse
Description:
IGBT Transistors IGNITION IGBT 12A 410V
Lifecycle:
New from this manufacturer.
Delivery:
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