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Document Number: 67341
S11-0243-Rev. A, 14-Feb-11
Vishay Siliconix
Si4403CDY
New Product
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= - 250 µA - 20 V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= - 250 µA
- 14.5
mV/°C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
2.8
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA - 0.4 - 1.0 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 8 V ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= - 20 V, V
GS
= 0 V - 1
µA
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 70 °C - 10
On-State Drain Current
a
I
D(on)
V
DS
- 10 V, V
GS
= - 5 V - 20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 9 A 0.0125 0.0155
V
GS
= - 2.5 V, I
D
= - 6 A 0.0155 0.0195
V
GS
= - 1.8 V, I
D
= - 3 A 0.0195 0.0250
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 9 A 40 S
Dynamic
b
Input Capacitance C
iss
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
2380
pFOutput Capacitance C
oss
340
Reverse Transfer Capacitance C
rss
280
Total Gate Charge Q
g
V
DS
= - 10 V, V
GS
= - 8 V, I
D
= - 5 A 60 90
nC
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 5 A
36.5 55
Gate-Source Charge Q
gs
3.1
Gate-Drain Charge Q
gd
9.9
Gate Resistance R
g
f = 1 MHz 1.0 4.8 9.6
Tur n - O n D e l ay Time t
d(on)
V
DD
= - 10 V, R
L
= 2
I
D
- 5 A, V
GEN
= - 8 V, R
g
= 1
714
ns
Rise Time t
r
918
Turn-Off DelayTime t
d(off)
108 200
Fall Time t
f
41 80
Tur n - O n D e l ay Time t
d(on)
V
DD
= - 10 V, R
L
= 2
I
D
- 5 A, V
GEN
= - 4.5 V, R
g
= 1
14 28
Rise Time t
r
16 32
Turn-Off DelayTime t
d(off)
101 200
Fall Time t
f
40 80
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current I
S
T
C
= 25 °C - 4.1
A
Pulse Diode Forward Current I
SM
- 40
Body Diode Voltage V
SD
I
S
= - 3 A, V
GS
= 0 V - 0.66 - 1.2 V
Body Diode Reverse Recovery Time t
rr
I
F
= - 2.3 A, dI/dt = 100 A/µs, T
J
= 25 °C
81 150 ns
Body Diode Reverse Recovery Charge Q
rr
150 300 nC
Reverse Recovery Fall Time t
a
43
ns
Reverse Recovery Rise Time t
b
38
