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SI4403CDY-T1-GE3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 67341
S11-0243-Rev. A, 14-Feb-11
Vishay Siliconix
Si4403CDY
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.02
0.04
0.06
0.08
0.10
012345
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 10 A
0
20
40
60
80
100
0.001 0.01 0.1 1 10
Power (W)
Time (s)
Safe Operating Area
0.01
0.1
1
10
100
0.01 0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 ms
Limited by R
DS(on)
*
1 ms
I
DM
Limited
T
C
= 25 °C
Single Pulse
BVDSS Limited
10 ms
10 s
1 s
DC
I
D
Limited
Vishay Siliconix
Si4403CDY
Document Number: 67341
S11-0243-Rev. A, 14-Feb-11
www.vishay.com
5
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
4
8
12
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Foot
0.0
1.2
2.4
3.6
4.8
6.0
0255075100125150
Power (W)
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
0255075100125150
Power (W)
T
A
- Ambient Temperature (°C)
www.vishay.com
6
Document Number: 67341
S11-0243-Rev. A, 14-Feb-11
Vishay Siliconix
Si4403CDY
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67341
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=85 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Foot
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
P1-P3P4-P6P7-P9

SI4403CDY-T1-GE3

Mfr. #:
Buy SI4403CDY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 1.8V P-Channel
Lifecycle:
New from this manufacturer.
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