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NTP5404NRG

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 8
1 Publication Order Number:
NTB5404N/D
NTB5404N, NTP5404N,
NVB5404N
Power MOSFET
40 V, 167 A, Single N−Channel, D
2
PAK &
TO−220
Features
• Low R
DS(on)
• High Current Capability
• Low Gate Charge
• AEC−Q101 Qualified and PPAP Capable − NVB5404N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Electronic Brake Systems
• Electronic Power Steering
• Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage V
DSS
40 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current − R
JC
Steady
State
T
C
= 25°C
I
D
167
A
T
C
= 100°C 118
Power Dissipation −
R
JC
Steady
State
T
C
= 25°C
P
D
254 W
Continuous Drain
Current − R
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
24
A
T
A
= 100°C 17
Power Dissipation −
R
JA
(Note 1)
Steady
State
T
A
= 25°C P
D
5.4 W
Pulsed Drain Current
t
p
= 10 s
I
DM
670 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
175
°C
Source Current (Body Diode) Pulsed I
S
75 A
Single Pulse Drain−to Source Avalanche
Energy − (V
DD
= 50 V, V
GS
= 10 V, I
PK
= 45 A,
L = 1 mH, R
G
= 25 )
EAS 1000 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Case (Drain) R
θ
JC
0.59 °C/W
Junction−to−Ambient (Note 1) R
θ
JA
50 °C/W
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
www.onsemi.com
MARKING
DIAGRAMS
V
(BR)DSS
R
DS(ON)
MAX
I
D
MAX
(Note 1)
40 V
4.5 m @ 10 V
167 A
NTB5404NG
AYWW
G = Pb−Free Device
A = Assembly Location
Y = Year
WW = Work Week
D
2
PAK
CASE 418B
STYLE 2
N−Channel
D
S
G
1
2
3
1
Device Package Shipping†
ORDERING INFORMATION
NTP5404NRG TO−220
(Pb−Free)
50 Units / Rail
NTB5404NT4G D
2
PAK
(Pb−Free)
800 / Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
TO−220AB
CASE 221A
STYLE 5
1
2
3
4
NTP5404NRG
AYWW
NVB5404NT4G D
2
PAK
(Pb−Free)
800 / Tape & Ree
l
NTB5404N, NTP5404N, NVB5404N
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
40 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
34 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25°C 1.0 A
T
J
= 100°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±30 V ±100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.5 3.5 V
Gate Threshold Temperature
Coefficient
V
GS(TH)
/T
J
−8.2 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 40 A 3.5 4.5 m
V
GS
= 5.0 V, I
D
= 15 A 5.1 7.0
Forward Transconductance g
FS
V
DS
= 10 V, I
D
= 15 A 35 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 32 V
4300 7000
pF
Output Capacitance C
OSS
1075 1700
Reverse Transfer Capacitance C
RSS
450 1000
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 32 V,
I
D
= 40 A
125
nC
Threshold Gate Charge Q
G(TH)
5.5
Gate−to−Source Charge Q
GS
12.5
Gate−to−Drain Charge Q
GD
55
SWITCHING CHARACTERISTICS, V
GS
= 10 V (Note 3)
Turn−On Delay Time
t
d(ON)
V
GS
= 10 V, V
DD
= 32 V,
I
D
= 40 A, R
G
= 2.5
10
ns
Rise Time t
r
65
Turn−Off Delay Time t
d(OFF)
85
Fall Time t
f
85
SWITCHING CHARACTERISTICS, V
GS
= 5 V (Note 3)
Turn−On Delay Time
t
d(ON)
V
GS
= 5 V, V
DD
= 20 V,
I
D
= 20 A, R
G
= 2.5
25
ns
Rise Time t
r
175
Turn−Off Delay Time t
d(OFF)
46
Fall Time t
f
62
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 20 A
T
J
= 25°C 0.8 1.1
V
T
J
= 125°C 0.65
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
SD
/dt = 100 A/s,
I
S
= 20 A
75
ns
Charge Time t
a
38
Discharge Time t
b
38
Reverse Recovery Charge Q
RR
140 nC
2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTB5404N, NTP5404N, NVB5404N
www.onsemi.com
3
TYPICAL PERFORMANCE CURVES
T
J
= 125°C
0
25
2
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
0
Figure 1. On−Region Characteristics
3
25
0
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE ()
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
−50 0−25 25
2
2.2
1
0.8
0.6
50 175
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
T
J
= −55°C
75
T
J
= 25°C
I
D
= 40 A
V
GS
= 10 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
T
J
= 25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE ()
V
GS
= 10 V
10
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
28
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 100°C
4 V
4.6 V
V
GS
= 5 V
V
DS
≥ 10 V
16 36
3.8 V
4
4
0
200
V
GS
= 8 V to 10 V
50
125100
5
10
0.008
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.004
0.005
0.006
0.01
36
0.003
4
0.006
0.002
0.01
0.004
0.003
0.005
1000
4
610
12
20 14
0
30 40
1.8
20
50
4
6 V
7 V
0.007
86050
175
75
I
D
= 40 A
T
J
= 25°C
0.002 0.001
100
3224812
8
4.2 V
4.8 V
759
0.009
0.007
0.008
0.009
13012011010070 80 90
1.6
1.4
1.2
150
13 759
75
150
125
100
4.4 V
5 V
891
0
670
100
125
150
175
200
10000
100000
T
J
= 175°C
P1-P3P4-P6P7-P7

NTP5404NRG

Mfr. #:
Buy NTP5404NRG
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET TO220 40V 136A 3.5mOhm
Lifecycle:
New from this manufacturer.
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