2
FN4445.2
August 12, 2005
Absolute Maximum Ratings Thermal Information
Collector to Emitter Voltage (R
B
≤ 10kΩ to GND) . . . . . . . . . . . . 11V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . .12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 4.5V
Collector Current . . . . . . . . . . . . . . . . . . . . . . . . 14mA at T
J
=150°C
26mA at T
J
=125°C
Base Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.7mA
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400V
(Per MIL-STD-883 Method 3015.7)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to 85°C
Thermal Resistance (Typical, Note 1)
θ
JA
(°C/W)
SOT23-6 Package . . . . . . . . . . . . . . . . . . . . . . . . . . 350
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . . 175°C
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
(Soldering 10s, Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. θ
JA
is measured with the component mounted on an evaluation PC board in free air.
2. If a transistor is used in a diode configuration, the collector must be connected to the base to avoid exceeding the maximum base current
specification.
Electrical Specifications T
A
= 25°C
PARAMETER SYMBOL TEST CONDITIONS
(NOTE 3)
TEST
LEVEL MIN TYP MAX UNITS
DC CHARACTERISTICS FOR HFA3134 (NPN)
Collector to Base Breakdown Voltage V
(BR)CBO
I
C
= 10µA, I
E
= 0 A 12 21 - V
Collector to Emitter Breakdown Voltage V
(BR)CEO
I
C
= 100µA, I
B
= 0 A 4 9 - V
V
(BR)CER
I
C
= 100µA, R
B
= 10kΩ A1117-V
Emitter to Base Breakdown Voltage (Note 4) V
(BR)EBO
I
E
= 10µA, I
C
= 0 B - 6 - V
Collector-Cutoff-Current I
CEO
V
CE
= 6V, I
B
= 0 A -5 - 5 nA
Collector-Cutoff-Current I
CBO
V
CB
= 8V, I
E
= 0 A -5 - 5 nA
Emitter-Cutoff-Current (Note 5) I
EBO
V
EB
= 1V, I
C
= 0 B - 1 - pA
Collector to Collector Leakage C - 1 - nA
Collector to Emitter Saturation Voltage V
CE(SAT)
I
C
= 10mA, I
B
= 1mA A - 95 250 mV
Base to Emitter Voltage (Note 5) V
BE
I
C
= 10mA, V
CE
= 2V A - 780 1000 mV
Q
1
to Q
2
Base to Emitter Voltage Match
(Note 5)
∆V
BE
I
C
= 10mA, V
CE
= 2V A - 1.2 6 mV
I
C
= 1mA, V
CE
= 2V A - 1.0 6 mV
I
C
= 0.1mA, V
CE
= 2V A - 0.7 6 mV
Base to Emitter Voltage Drift I
C
= 10mA C - -1.5 - mV/°C
DC Forward-Current Transfer Ratio
(Note 5)
h
FE
I
C
= 10mA, V
CE
= 2V A 48 80 200
I
C
= 1mA, V
CE
= 2V A 48 87 200
I
C
= 0.1mA, V
CE
= 2V A 48 90 200
I
C
= 10mA, V
CE
= 5V A 48 96 200
I
C
= 1mA, V
CE
= 5V A 48 96 200
I
C
= 0.1mA, V
CE
= 5V A 48 100 200
Q
1
to Q
2
Current Transfer Ratio Match ∆h
FE
1mA ≤ I
C
≤ 10mA,
1V ≤ V
CE
≤ 5V
A-28%
Early Voltage V
A
I
C
= 1mA, ∆V
CE
= 3V A 20 30 - V
HFA3134, HFA3135
