4
FN4445.2
August 12, 2005
DYNAMIC CHARACTERISTICS FOR HFA3135 (PNP)
Noise Figure NF f = 900MHz, I
C
= -10mA,
-1V ≤ V
CE
≤ -5V, Z
S
= 50Ω
B - 5.2 - dB
f = 900MHz, I
C
= -1mA,
-1V ≤ V
CE
≤ -5V, Z
S
= 50Ω
B - 4.6 - dB
Current Gain-Bandwidth Product f
T
I
C
= -10mA, V
CE
= -5V B - 7 - GHz
Power Gain-Bandwidth Product f
MAX
I
C
= -10mA, V
CE
= -5V B - TBD - GHz
Base to Emitter Capacitance V
BE
= 0.5V B - 550 - fF
Collector to Base Capacitance V
CB
= -3V B - 400 - fF
NOTES:
3. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only.
4. Measuring V
EBO
can degrade the transistor h
FE
and h
FE
match.
5. See Typical Performance Curves for more information.
Electrical Specifications T
A
= 25°C (Continued)
PARAMETER SYMBOL TEST CONDITIONS
(NOTE 3)
TEST
LEVEL MIN TYP MAX UNITS
Typical Performance Curves T
A
= 25°C, Unless Otherwise Specified
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
FIGURE 2. NPN COLLECTOR AND BASE CURRENTS vs
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT (mA)
COLLECTOR TO EMITTER VOLTAGE (V)
16
14
12
10
8
6
4
2
0
20
18
4.03.53.02.52.01.51.00.505.04.5
Q
1
Q
2
Q
1
Q
2
Q
1
Q
2
Q
1
Q
2
Q
1
Q
2
I
B
= 200µA
I
B
= 160µA
I
B
= 120µA
I
B
=80µA
I
B
=40µA
COLLECTOR CURRENT AND BASE CURRENT (A)
BASE TO EMITTER VOLTAGE (V)
1m
100µ
10µ
1µ
100n
10n
1n
100p
10p
100m
10m
1.00.80.60.4
I
C
I
B
Q
2
Q
1
Q
2
Q
1
0.90.70.5
HFA3134, HFA3135
