2010 Microchip Technology Inc. DS21131F-page 1
93LC76/86
Features:
• Single Supply with Programming Operation down
to 2.5V
• Low-Power CMOS Technology
- 1 mA active current typical
-5 A standby current (typical) at 3.0V
• ORG Pin Selectable Memory Configuration
1024 x 8 or 512 x 16-Bit Organization (93LC76)
2048 x 8 or 1024 x 16-Bit Organization (93LC86)
• Self-Timed Erase and Write Cycles
(including auto-erase)
• Automatic ERAL before WRAL
• Power On/Off Data Protection Circuitry
• Industry Standard 3-Wire Serial I/O
• Device Status Signal during Erase/Write Cycles
• Sequential Read Function
• 1,000,000 Erase/Write Cycles Ensured
• Data Retention > 200 years
• 8-Pin PDIP/SOIC Package
• Temperature Ranges Available
Description:
The Microchip Technology Inc. 93LC76/86 are 8K and
16K low voltage serial Electrically Erasable PROMs.
The device memory is configured as x8 or x16 bits
depending on the ORG pin setup. Advanced CMOS
technology makes these devices ideal for low power
nonvolatile memory applications. These devices also
have a Program Enable (PE) pin to allow the user to
write-protect the entire contents of the memory array.
The 93LC76/86 is available in standard 8-pin PDIP and
8-pin surface mount SOIC packages.
Package Types
Block Diagram
- Commercial (C) 0°C to +70°C
- Industrial (I) -40°C to +85°C
SOIC Package
PDIP Package
CS
CLK
DI
DO
V
SS
PE
V
CC
ORG
CS
CLK
DI
DO
VCC
PE
ORG
V
SS
93LC76/86
93LC76/86
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
DO
CS
CLK
VCC VSS
Memory
Array
Address
Decoder
Data
Register
Counter
Address
Output
Buffer
Mode
Decode
Logic
Generator
Clock
DI
PE
8K/16K 2.5V Microwire Serial EEPROM
Not recommended for new designs –
Please use 93LC76C or 93LC86C.
