93LC76/86
DS21131F-page 4 2010 Microchip Technology Inc.
TABLE 1-2: AC CHARACTERISTICS
AC CHARACTERISTICS
Applicable over recommended operating ranges shown below unless otherwise noted:
V
CC = +2.5V to +6.0V
Commercial (C): T
A = 0°C to +70°C
Industrial (I): T
A = -40°C to +85°C
Parameter Symbol Min. Max. Units Conditions
Clock frequency FCLK —3
2
MHz
MHz
4.5V VCC 6.0V
2.5V V
CC 4.5V
Clock high time TCKH 200
300
—ns
ns
4.5V VCC 6.0V
2.5V V
CC 4.5V
Clock low time TCKL 100
200
—ns
ns
4.5V VCC 6.0V
2.5V V
CC 4.5V
Chip select setup time TCSS 50
100
—ns
ns
4.5V VCC 6.0V, Relative to CLK
2.5V V
CC 4.5V, Relative to CLK
Chip select hold time TCSH 0—ns
Chip select low time T
CSL 250 ns Relative to CLK
Data input setup time T
DIS 50
100
—ns
ns
4.5V VCC
6.0V, Relative to CLK
2.5V V
CC <4.5V, Relative to CLK
Data input hold time T
DIH 50
100
—ns
ns
4.5V VCC 6.0V, Relative to CLK
2.5V V
CC 4.5V, Relative to CLK
Data output delay time T
PD —100
250
ns
ns
4.5V VCC 6.0V, CL = 100 pF
2.5V V
CC < 4.5V, CL = 100 pF
Data output disable time T
CZ —100
500
ns
ns
4.5V VCC 6.0V
2.5V V
CC < 4.5V (Note 1)
Status valid time Tsv 200
300
ns
ns
4.5V V
CC 6.0V, CL = 100 pF
2.5V V
CC <4.5V, CL = 100 pF
Program cycle time T
WC 5 ms Erase/Write mode
TEC 15 ms ERAL mode
TWL —30msWRAL mode
Endurance 1M cycles 25°C, Vcc = 5.0V, Block mode
(Note 2)
Note 1: This parameter is periodically sampled and not 100% tested.
2: This parameter is not tested but ensured by characterization. For endurance estimates in a specific appli-
cation, please consult the Total Endurance™ Model which can be obtained from Microchip’s web site at
www.microchip.com.
2010 Microchip Technology Inc. DS21131F-page 5
93LC76/86
TABLE 1-3: INSTRUCTION SET FOR 93LC76: ORG=1 (1X16 ORGANIZATION)
TABLE 1-4: INSTRUCTION SET FOR 93LC76: ORG=0 (X8 ORGANIZATION)
TABLE 1-5: INSTRUCTION SET FOR 93LC86: ORG=1 (X16 ORGANIZATION)
TABLE 1-6: INSTRUCTION SET FOR 93LC86: ORG=0 (X8 ORGANIZATION)
Instruction SB Opcode Address Data In Data Out
Req. CLK
Cycles
READ 1 10 X A8 A7 A6 A5 A4 A3 A2 A1 A0 D15 - D0 29
EWEN 1 00 11XXXXXXXX High-Z 13
ERASE 1 11 X A8 A7 A6 A5 A4 A3 A2 A1 A0 (RDY/BSY) 13
ERAL 1 00 1 0 X X X X X X X X (RDY/BSY) 13
WRITE 1 01 X A8 A7 A6 A5 A4 A3 A2 A1 A0 D15 - D0 (RDY/BSY) 29
WRAL 1 00 0 1 X X X X X X X X D15 - D0 (RDY/BSY) 29
EWDS 1 00 00XXXXXXXX High-Z 13
Instruction SB Opcode Address Data In Data Out
Req. CLK
Cycles
READ 1 10 X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 - D0 22
EWEN 1 00 11XXXXXXXX High-Z 14
ERASE 1 11 X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 (RDY/BSY) 14
ERAL 1 00 1 0 X X X X X X X X (RDY/BSY) 14
WRITE 1 01 X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 - D0 (RDY/BSY) 22
WRAL 1 00 0 1 X X X X X X X X D7 - D0 (RDY/BSY) 22
EWDS 1 00 00XXXXXXXX High-Z 14
Instruction SB Opcode Address Data In Data Out
Req. CLK
Cycles
READ 1 10 A9A8A7A6A5A4A3A2A1A0 D15 - D0 29
EWEN 1 00 11XXXXXXXX — High-Z 13
ERASE 1 11 A9A8A7A6A5A4A3A2A1A0 (RDY/BSY) 13
ERAL 1 00 10XXXXXXXX — (RDY/BSY) 13
WRITE 1 01 A9A8A7A6A5A4A3A2A1A0 D15 - D0 (RDY/BSY) 29
WRAL 1 00 01XXXXXXXXD15 - D0(RDY/BSY) 29
EWDS 1 00 00XXXXXXXX — High-Z 13
Instruction SB Opcode Address Data In Data Out
Req. CLK
Cycles
READ 1 10 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 - D0 22
EWEN 1 00 1 1XXXXXXXX High-Z 14
ERASE 1 11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 (RDY/BSY) 14
ERAL 1 00 1 0XXXXXXXX (RDY/BSY) 14
WRITE 1 01 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 - D0 (RDY/BSY) 22
WRAL 1 00 0 1XXXXXXXX D7 - D0(RDY/BSY) 22
EWDS 1 00 0 0XXXXXXXX High-Z 14
93LC76/86
DS21131F-page 6 2010 Microchip Technology Inc.
2.0 PRINCIPLES OF OPERATION
When the ORG pin is connected to VCC, the x16 orga-
nization is selected. When it is connected to ground,
the x8 organization is selected. Instructions, addresses
and write data are clocked into the DI pin on the rising
edge of the clock (CLK). The DO pin is normally held in
a high-Z state except when reading data from the
device, or when checking the Ready/Busy
status
during a programming operation. The Ready/Busy
status can be verified during an erase/write operation
by polling the DO pin; DO low indicates that program-
ming is still in progress, while DO high indicates the
device is ready. The DO will enter the high-impedance
state on the falling edge of the CS.
2.1 Start Condition
The Start bit is detected by the device if CS and DI are
both high with respect to the positive edge of CLK for
the first time.
Before a Start condition is detected, CS, CLK and DI
may change in any combination (except to that of a
Start condition), without resulting in any device opera-
tion (Read, Write, Erase, EWEN, EWDS, ERAL and
WRAL). As soon as CS is high, the device is no longer
in the Standby mode.
An instruction following a Start condition will only be
executed if the required amount of opcode, address
and data bits for any particular instruction are clocked
in.
After execution of an instruction (i.e., clock in or out of
the last required address or data bit) CLK and DI
become “don't care” bits until a new Start condition is
detected.
2.2 DI/DO
It is possible to connect the Data In and Data Out pins
together. However, with this configuration it is possible
for a “bus conflict” to occur during the “dummy zero”
that precedes the read operation, if A0 is a logic high
level. Under such a condition the voltage level seen at
Data Out is undefined and will depend upon the relative
impedances of Data Out and the signal source driving
A0. The higher the current sourcing capability of A0,
the higher the voltage at the Data Out pin.
2.3 Erase/Write Enable and Disable
(EWEN, EWDS)
The 93LC76/86 powers up in the Erase/Write Disable
(EWDS) state. All programming modes must be
preceded by an Erase/Write Enable (EWEN) instruction.
Once the EWEN instruction is executed, programming
remains enabled until an EWDS instruction is executed
or V
CC is removed from the device. To protect against
accidental data disturb, the EWDS instruction can be
used to disable all erase/write functions and should
follow all programming operations. Execution of a READ
instruction is independent of both the EWEN and EWDS
instructions.
2.4 Data Protection
During power-up, all programming modes of operation
are inhibited until V
CC has reached a level greater than
1.4V. During power-down, the source data protection
circuitry acts to inhibit all programming modes when
V
CC has fallen below 1.4V.
The EWEN and EWDS commands give additional
protection against accidentally programming during
normal operation.
After power-up, the device is automatically in the
EWDS mode. Therefore, an EWEN instruction must be
performed before any ERASE or WRITE instruction can
be executed.

93LC76-I/SN

Mfr. #:
Manufacturer:
Microchip Technology
Description:
EEPROM 516x8 Or 1024x8
Lifecycle:
New from this manufacturer.
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