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ZXTN2010ZQTA

P1-P3P4-P6P7-P7
ZXTN2010Z
Da
tasheet Number: DS33661 Rev. 4 - 2
1 of 7
www.diodes.com
May 2013
© Diodes Incorporated
ZXTN2010Z
A
Product Line o
f
Diodes Incorporated
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Features
BV
CEO
> 60V
I
C
= 5A High Continuous Current
R
SAT
= 30mΩ for a Low Equivalent On-Resistance
Low Saturation Voltage V
CE(SAT)
< 65mV @ I
C
= 1A
h
FE
Specified Up to 10A for High Current Gain Hold Up
Complementary PNP Type: ZXTP2012Z
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Application
Emergency Lighting Circuits
Motor Driving (including DC Fans)
Backlight Inverters
Power Switches
Gate Driving MOSFETs and IGBTs
Mechanical Data
Case: SOT89
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.05 grams (Approximate)
Ordering Information (Note 5)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
ZXTN2010ZTA AEC-Q101 851 7 12 1,000
ZXTN2010Z-13R AEC-Q101 851 13 12 4,000
ZXTN2010ZQTA Automotive 851 7 12 1,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
851 = Product Type Marking Code
Green
Top View
Device Symbol
Top View
Pin Out
SOT89
C
E
C
B
C
E
B
851
ZXTN2010Z
Da
tasheet Number: DS33661 Rev. 4 - 2
2 of 7
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May 2013
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Diodes Incorporated
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
150 V
Collector-Emitter Voltage
V
CEO
60 V
Emitter-Base Voltage
V
EBO
7 V
Continuous Collector Current
I
C
5 A
Peak Pulse Current
I
CM
20 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
Linear derating factor
P
D
1.5
12
W
mW/°C
Power Dissipation (Note 7)
Linear derating factor
P
D
2.1
16.8
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 6)
R
θJA
83 °C/W
Thermal Resistance, Junction to Ambient (Note 7)
R
θJA
60 °C/W
Thermal Resistance, Junction to Leads (Note 8)
R
θJL
3.23 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
ESD Ratings (Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM ≥ 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 6. For a device mounted with the exposed collector pad on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
7. Same as note (6), except the device is mounted on 50mm x 50mm 1oz copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN2010Z
Da
tasheet Number: DS33661 Rev. 4 - 2
3 of 7
www.diodes.com
May 2013
© Diodes Incorporated
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A
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Diodes Incorporated
Thermal Characteristics and Derating Information
100m 1 10 100
10m
100m
1
10
Single Pulse. T
amb
=25°C
25x25mm 1oz Cu
V
CE(sat)
Limit
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
I
C
Collector Current (A)
V
CE
Collector-Emitter Voltage (V)
0 20406080100120140160
0.0
0.5
1.0
1.5
2.0
25x25mm 1oz Cu
50x50mm 1oz Cu
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
25x25mm 1oz Cu
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse. T
amb
=25°C
25x25mm 1oz Cu
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
P1-P3P4-P6P7-P7

ZXTN2010ZQTA

Mfr. #:
Buy ZXTN2010ZQTA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT Pwr Low Sat Transistor
Lifecycle:
New from this manufacturer.
Delivery:
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