ZXTN2010ZQTA Datasheet ZXTN2010ZQTA, ZXTN2010ZTA | P4-P6

ZXTN2010Z

Da

tasheet Number: DS33661 Rev. 4 - 2

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Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage

BV

CBO

150 190 — V

I

C

= 100µA

Collector-Emitter Breakdown Voltage (Note 10)

BV

CER

150 190 — V

I

C

= 1µA, R

B

≤ 1kΩ

Collector-Emitter Breakdown Voltage (Note 10)

BV

CEO

60 80 — V

I

C

= 10mA

Emitter-Base Breakdown Voltage

BV

EBO

7 8.1 — V

I

E

= 100µA

Collector Cutoff Current

I

CBO

— < 1

50

500

nA

V

CB

= 120V

V

CB

= 120V, T

A

= +100°C

Collector Cutoff Current

I

CER

R

≤1kΩ

— < 1

100

500

nA

V

CB

= 120V

V

CB

= 120V, T

A

= +100°C

Emitter Cutoff Current

I

EBO

— < 1 10 nA

V

EB

= 6V

DC Current Transfer Static Ratio (Note 10)

h

FE

100 200

—

I

C

= 10mA, V

CE

= 1V

100 200 300

I

C

= 2A, V

CE

= 1V

55 105

—

I

C

= 5A, V

CE

= 1V

20 40

—

I

C

= 10A, V

CE

= 1V

Collector-Emitter Saturation Voltage (Note 10)

V

CE(SAT)

—

17 30

mV

I

C

= 100mA, I

B

= 5mA

—

35 55

I

C

= 1A, I

B

= 100mA

—

40 65

I

C

= 1A, I

B

= 50mA

—

90 125

I

C

= 2A, I

B

= 50mA

—

170 230

I

C

= 6A, I

B

= 300mA

Base-Emitter Saturation Voltage (Note 10)

V

BE

(

SAT

)

— 970 1100 mV

I

C

= 6A, I

B

= 300mA

Base-Emitter Turn-on Voltage (Note 10)

V

BE

(

ON

)

— 910 1050 mV

I

C

= 6A, V

CE

= 1V

Transitional Frequency

f

T

— 130 — MHz

I

C

= 100mA, V

CE

= 10V,

f = 50MHz

Output Capacitance

C

obo

—

31

—

pF

V

CB

= 10V, f = 1MHz,

Switching Time

t

ON

—

42

— ns

V

CC

= 10V, I

C

= 1A,

I

B1

= I

B2

= 100mA

t

OFF

760

Note: 10. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.

ZXTN2010Z

Da

tasheet Number: DS33661 Rev. 4 - 2

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Typical Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

1m 10m 100m 1 10

10m

100m

1

1m 10m 100m 1 10

0.0

0.1

0.2

0.3

0.4

0.5

0.6

1m 10m 100m 1 10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1m 10m 100m 1 10

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1m 10m 100m 1 10

0.4

0.6

0.8

1.0

1.2

1.4

0

50

100

150

200

250

V

CE(SAT)

v I

C

Tamb=25°C

I

C

/I

B

=50

I

C

/I

B

=20

I

C

/I

B

=10

V

CE(SAT)

(V)

I

C

Collector Current (A)

V

BE(SAT)

v I

C

I

C

/I

B

=10

100°C

25°C

-55°C

V

CE(SAT)

(V)

I

C

Collector Current (A)

h

FE

v I

C

V

CE

=1V

-55°C

25°C

100°C

Normalised Gain

I

C

Collector Current (A)

25°C

V

CE(SAT)

v I

C

I

C

/I

B

=10

100°C

-55°C

V

BE(SAT)

(V)

I

C

Collector Current (A)

V

BE(ON)

v I

C

V

CE

=1V

100°C

25°C

-55°C

V

BE(ON)

(V)

I

C

Collector Current (A)

Typical Gain (h

FE

)

ZXTN2010Z

Da

tasheet Number: DS33661 Rev. 4 - 2

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

SOT89

Dim Min Max

A 1.40 1.60

B 0.44 0.62

B1 0.35 0.54

C 0.35 0.44

D 4.40 4.60

D1 1.62 1.83

E 2.29 2.60

e 1.50 Typ

H 3.94 4.25

H1 2.63 2.93

L 0.89 1.20

All Dimensions in mm

Dimensions Value (in mm)

X 0.900

X1 1.733

X2 0.416

Y 1.300

Y1 4.600

Y2 1.475

Y3 0.950

Y4 1.125

C 1.500

Y1

X1

Y2

Y

C

X (3x)

Y3

Y4

X2 (2x)

E

H

D1

B1

B

e

C

L

A

D

8° (4X)

H

R

0

.

2

0

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