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NTTFS5116PLTAG

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 1
1 Publication Order Number:
NTTFS5116PL/D
NTTFS5116PL
Power MOSFET
−60 V, −20 A, 52 mW
Features
• Low R
DS(on)
• Fast Switching
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Load Switches
• DC Motor Control
• DC−DC Conversion
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
−60 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
−5.7
A
T
A
= 100°C −4.0
Power Dissipation R
q
JA
(Note 1)
T
A
= 25°C
P
D
3.2
W
T
A
= 100°C 1.6
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
−20
A
T
C
= 100°C −14
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C
P
D
40
W
T
C
= 100°C 20
Pulsed Drain Current
t
p
= 10 ms
I
DM
−76 A
Operating Junction and Storage Temperature T
J
,
T
stg
−55 to
+175
°C
Source Current (Body Diode) I
S
−20 A
Single Pulse Drain−to−Source Ava-
lanche Energy
L = 0.1 mH
E
AS
45 mJ
I
AS
30 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case – Steady
State (Note 1)
R
q
JC
3.8
°C/W
Junction−to−Ambient – Steady
State (Note 1)
R
q
JA
47
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces.
ORDERING INFORMATION
http://onsemi.com
Device Package Shipping
†
V
(BR)DSS
R
DS(on)
MAX I
D
MAX
−60 V
52 mW @ −10 V
−20 A
P−Channel MOSFET
D (5−8)
S (1,2,3)
G (4)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
72 mW @ −4.5 V
NTTFS5116PLTAG WDFN8
(Pb−Free)
1500/Tape & Reel
(Note: Microdot may be in either location)
1
5116 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
1
NTTFS5116PLTWG WDFN8
(Pb−Free)
5000/Tape & Reel
5116
AYWWG
G
D
D
D
D
S
S
S
G
NTTFS5116PL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
69.7 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= −60 V
T
J
= 25°C −1.0 mA
T
J
= 125°C −100
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−1 −3 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
−6.2 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= −10 V I
D
= −6 A 37 52 mW
V
GS
= −4.5 V I
D
= −4.4 A 51 72
Forward Transconductance g
FS
V
DS
= −15 V, I
D
= −6 A 11 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz, V
DS
= −30 V
1258
pF
Output Capacitance C
oss
127
Reverse Transfer Capacitance C
rss
84
Total Gate Charge Q
G(TOT)
V
GS
= −10 V, V
DS
= −48 V, I
D
= −5 A 25 nC
V
GS
= −4.5 V, V
DS
= −48 V, I
D
= −5 A 14
Threshold Gate Charge Q
G(TH)
V
GS
= −4.5 V, V
DS
= −48 V, I
D
= −5 A
1
nC
Gate−to−Source Charge Q
GS
4
Gate−to−Drain Charge Q
GD
7
Plateau Voltage V
GP
3.1 V
Gate Resistance R
G
5.3
W
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
d(on)
V
GS
= −4.5 V, V
DS
= −48 V,
I
D
= −5 A, R
G
= 6 W
15
ns
Rise Time t
r
58
Turn−Off Delay Time t
d(off)
30
Fall Time t
f
37
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= −5 A
T
J
= 25°C −0.79 −1.2
V
T
J
= 125°C −0.64
Reverse Recovery Time t
RR
V
GS
= 0 V, d
IS
/d
t
= −100 A/ms,
I
S
= −5 A
20
ns
Charge Time t
a
15
Discharge Time t
b
5
Reverse Recovery Charge Q
RR
19 nC
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTTFS5116PL
http://onsemi.com
3
TYPICAL CHARACTERISTICS
0
10
20
30
40
012345
Figure 1. On−Region Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 10 V
V
GS
= 4.5 V
V
GS
= 4 V
V
GS
= 3.5 V
V
GS
= 3 V
0
10
20
30
40
23456
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
DS
≥ 10 V
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
0.035
0.045
0.055
0.065
0.075
246810
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
I
D
= −6 A
T
J
= 25°C
0.030
0.040
0.050
0.060
0.070
0.080
5 10152025303540
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= 4.5 V
T
J
= 25°C
V
GS
= 10 V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
−50 −25 0 25 50 75 100 125 150 175
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
I
D
= −4.4 A
V
GS
= 4.5 V
100
1,000
10,000
10 20 30 40 50 60
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
P1-P3P4-P6

NTTFS5116PLTAG

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Manufacturer:
ON Semiconductor
Description:
MOSFET PFET U8FL 60V
Lifecycle:
New from this manufacturer.
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