NTTFS5116PLTAG

NTTFS5116PL
http://onsemi.com
4
TYPICAL CHARACTERISTICS
0
200
400
600
800
1000
1200
1400
1600
0 102030405060
Figure 7. Capacitance Variation
V
DS
, DRAINTOSOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
V
GS
= 0 V
T
J
= 25°C
C
iss
C
oss
1800
C
rss
0
2
4
6
8
10
0 5 10 15 20 25
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
Qg, TOTAL GATE CHARGE (nC)
V
GS
, GATETOSOURCE VOLTAGE
(V)
V
DS
= 48 V
I
D
= 5 A
T
J
= 25°C
Q
gs
Q
gd
Q
T
1
10
100
1000
1 10 100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
t, TIME (ns)
t
d(off)
t
d(on)
t
r
t
f
V
DD
= 48 V
I
D
= 5 A
V
GS
= 4.5 V
0
10
20
30
40
0.5 0.6 0.7 0.8 0.9 1.0 1.1
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCETODRAIN VOLTAGE (V)
I
S
, SOURCE CURRENT (A)
T
J
= 25°C
V
GS
= 0 V
0.1
1
10
100
0.1 1 10 100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAINTOSOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
10 ms
0
15
30
45
25 50 75 100 125 150 175
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (°C)
E
AS
, SINGLE PULSE DRAINTO
SOURCE AVALANCHE ENERGY (mJ)
NTTFS5116PL
http://onsemi.com
5
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 13. Thermal Response
PULSE TIME (sec)
R
q
JA
(t)
D = 0.5
Single Pulse
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
NTTFS5116PL
http://onsemi.com
6
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE C
M
0 ***
1.60
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
1
56
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
D
E
B
A
0.20
0.20
2X
2X
DIM MIN NOM
MILLIMETERS
A 0.70 0.75
A1 0.00
D1
E1
1.47 1.60
e
0.64
0.06 0.13
A
0.10
0.10
DETAIL A
14
8
L1
e/2
8X
D2
G
E2
K
0.10 B
C
L
DETAIL A
A1
e
6X
c
4X
C
SEATING
PLANE
5
MAX
0.80
0.05
0.40
0.25
3.15
2.24
3.15
1.73
0.51
0.20
M
*For additional information on our Pb
*Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting T
echniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.650.42
0.75
2.30
3.46
PACKAGE
8X
0.055 0.059
0 ***
0.063
12
0.028 0.030
0.000
0.006 0.008
0.025
0.002 0.005
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
0.008
MIN NOM
INCHES
MAX
7
8
PITCH
3.60
0.57
0.47
OUTLINE
DIMENSION: MILLIMETERS
3.30 BSC
3.30 BSC
0.130 BSC
0.130 BSC
2.37
0.66
4X
E3 0.23 0.30 0.40 0.009 0.012 0.016
E3
4X
234
q
b
c
D
D2
E
E2
G
K
L
L1
q
°°°°
0.30
1.40 1.50
*** *** *** ***
0.43 0.56
0.012 0.017 0.022
0.0160.012
0.410.30
0.65 BSC 0.026 BSC
0.058
0.063
0.116 0.120
3.05
2.95
1.98
2.95 3.05
2.11
0.078
0.116 0.120
0.083
*** ***
0.0120.009
C
C
0.23
0.15
0.30
0.20
CA
0.05
C
C
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NTTFS5116PLTAG

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ON Semiconductor
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MOSFET PFET U8FL 60V
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