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NTHD4502NT1

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2012
June, 2012 − Rev. 6
1 Publication Order Number:
NTHD4502N/D
NTHD4502N
Power MOSFET
30 V, 3.9 A, Dual N−Channel ChipFETt
Features
• Planar Technology Device Offers Low R
DS(on)
and Fast Switching Speed
• Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6.
Ideal Device for Applications Where Board Space is at a Premium.
• ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for
Applications Where Heat Transfer is Required.
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC−DC Buck or Boost Converters
• Low Side Switching
• Optimized for Battery and Low Side Switching Applications in
Computing and Portable Equipment
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
2.9
A
T
A
= 85°C 2.1
t ≤ 5 s T
A
= 25°C 3.9
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C
P
D
1.13 W
t ≤ 5 s 2.1
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
2.2
A
T
A
= 85°C 1.6
Power Dissipation
(Note 2)
T
A
= 25°C P
D
0.64 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
12 A
ESD Capability
(Note 3)
C = 100 pF,
R
S
= 1500 W
ESD−
HBM
125 V
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) I
S
2.5 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 0.214 in sq).
3. ESD Rating Information: HBM Class 0.
Device Package Shipping
†
ORDERING INFORMATION
ChipFET
CASE 1206A
STYLE 2
http://onsemi.com
30 V
110 mW @ 4.5 V
80 mW @ 10 V
R
DS(on)
TYP
3.9 A
I
D
MAXV
(BR)DSS
MARKING
DIAGRAM
1
2
3
4
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
PIN
CONNECTIONS
NTHD4502NT1G ChipFET
(Pb−Free)
3000/Tape & Reel
8
7
6
5
5
6
7
81
2
3
4
D
1
(7, 8)
G
1
(2)
S
1
(1)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
C5 M
G
C5 = Specific Device Code
M = Month Code
G = Pb−Free Package
N−Channel MOSFET
1
8
D
2
(5, 6)
G
2
(4)
S
2
(3)
NTHD4502N
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 4)
R
q
JA
110
°C/W
Junction−to−Ambient – t ≤ 5 s (Note 4)
R
q
JA
60
Junction−to−Ambient – Steady State (Note 5)
R
q
JA
195
Junction−to−Foot – Steady State (Note 5)
R
q
JF
40
4. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
5. Surface Mounted on FR4 Board using the minimum recommended pad size (Cu area = 0.214 in sq).
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 36 V
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 24 V 1.0 mA
V
GS
= 0 V, V
DS
= 24 V, T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "20 V "100 nA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 1.65 3.0 V
Drain−to−Source On−Resistance R
DS(on)
V
GS
= 10 V, I
D
= 2.9 A 78 85 mW
V
GS
= 4.5 V, I
D
= 2.2 A 105 140
Forward Transconductance g
FS
V
DS
= 15 V, I
D
= 2.9 A 3.8 S
CHARGES AND CAPACITANCES
Input Capacitance C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 15 V
140
pF
Output Capacitance C
OSS
53
Reverse Transfer Capacitance C
RSS
16
Input Capacitance C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 24 V
135 250
pF
Output Capacitance C
OSS
42 75
Reverse Transfer Capacitance C
RSS
13 25
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 2.9 A
3.6 7.0
nC
Threshold Gate Charge Q
G(TH)
0.3
Gate−to−Source Charge Q
GS
0.6
Gate−to−Drain Charge Q
GD
0.7
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 24 V,
I
D
= 2.9 A
1.9
nC
Threshold Gate Charge Q
G(TH)
0.3
Gate−to−Source Charge Q
GS
0.6
Gate−to−Drain Charge Q
GD
0.9
6. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
NTHD4502N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (continued) (T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Units
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V, I
S
= 2.5 A 0.85 1.2 V
Reverse Recovery Time t
RR
V
GS
= 0 V, I
S
= 2.9 A,
dI
S
/dt = 100 A/ms
8.6 ns
Reverse Recovery Charge Q
RR
4.0 nC
Reverse Recovery Time t
RR
V
GS
= 0 V, I
S
= 1.0 A,
dI
S
/dt = 100 A/ms
8.4 ns
Reverse Recovery Charge Q
RR
4.0 nC
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time t
d(ON)
V
GS
= 10 V, V
DD
= 24 V,
I
D
= 1 A, R
G
= 6 W
6.5 12
ns
Rise Time t
r
5.4 10
Turn−Off Delay Time t
d(OFF)
14.9 25
Fall Time t
f
1.8 5.0
Turn−On Delay Time t
d(ON)
V
GS
= 4.5 V, V
DD
= 24 V,
I
D
= 2.9 A, R
G
= 2.5 W
7.8
ns
Rise Time t
r
12.6
Turn−Off Delay Time t
d(OFF)
9.6
Fall Time t
f
2.8
7. Switching characteristics are independent of operating junction temperatures.
P1-P3P4-P6

NTHD4502NT1

Mfr. #:
Buy NTHD4502NT1
Manufacturer:
ON Semiconductor
Description:
MOSFET 2N-CH 30V 2.2A CHIPFET
Lifecycle:
New from this manufacturer.
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