NTHD4502NT1

NTHD4502N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
4 V
100°C
0
10
5
6
632
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
4
2
0
1
Figure 1. OnRegion Characteristics
1
6
45
5
4
2
3
0
6
Figure 2. Transfer Characteristics
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
57
0.2
0.1
0
Figure 3. OnResistance vs. GatetoSource
Voltage
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAINTOSOURCE RESISTANCE (W)
I
D,
DRAIN CURRENT (AMPS)
26
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
50 025 25
1.4
1.2
1.0
0.8
0.6
50 125100
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
0.3
46
T
J
= 55°C
I
D
= 2.9 A
T
J
= 25°C
0.12
0.07
75 150
T
J
= 25°C
I
D
= 2.9 A
V
GS
= 10 V
R
DS(on),
DRAINTOSOURCE
RESISTANCE (NORMALIZED)
4
25°C
R
DS(on),
DRAINTOSOURCE RESISTANCE (W)
1.8
V
GS
= 4.5 V
310
5
0.1
3025
Figure 6. DraintoSource Leakage Current
vs. Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
15
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 100°C
3.4 V
2.6 V
2.8 V
V
GS
= 10 V
10
1000
V
DS
10 V
35
0.09
10
V
GS
= 10, 6, 5, 4.5 & 4.2 V resp.
2
2
0.25
89
0.10
0.08
0.11
4
1.6
100
1
20
T
J
= 150°C
8
3 V
3.2 V
3.6 V
3.8 V
3
1
0.15
0.05
NTHD4502N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
V
DS
= 0 V
V
GS
= 0 V
510 10
300
200
100
0
30
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
C, CAPACITANCE (pF)
021
8
2
0
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
Q
G
, TOTAL GATE CHARGE (nC)
V
GS,
GATETOSOURCE VOLTAGE (VOLTS)
T
J
= 25°C
C
OSS
C
ISS
C
RSS
I
D
= 2.9 A
T
J
= 25°C
Q
G
4
6
V
DS,
DRAINTOSOURCE VOLTAGE (VOLTS)
24
8
0
Q
GD
101
10
0.1
100
R
G
, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
t, TIME (ns)
V
DD
= 24 V
I
D
= 1.0 A
V
GS
= 10 V
100
50
12
4
t
d(off)
t
d(on)
t
f
t
r
V
GS
V
DS
15
4
0.9
3
0
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
T
J
= 25°C
0.7
0.4
0.3
1
2
20
10.5 0.8
Q
GS
16
12
10
3
1
0.6
20 25
V
DS
V
GS
NTHD4502N
http://onsemi.com
6
PACKAGE DIMENSIONS
ChipFET]
CASE 1206A03
ISSUE K
STYLE 2:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
E
A
b
e
e1
D
1234
8765
c
L
1234
8765
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
0.05 (0.002)
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.00 1.05 1.10 0.039
INCHES
b 0.25 0.30 0.35 0.010
c 0.10 0.15 0.20 0.004
D 2.95 3.05 3.10 0.116
E 1.55 1.65 1.70 0.061
e 0.65 BSC
e1 0.55 BSC
L 0.28 0.35 0.42 0.011
0.041 0.043
0.012 0.014
0.006 0.008
0.120 0.122
0.065 0.067
0.025 BSC
0.022 BSC
0.014 0.017
NOM MAX
1.80 1.90 2.00 0.071 0.075 0.079
H
E
5° NOM
q
5° NOM
H
E
q
SOLDERING FOOTPRINT
0.457
0.018
2.032
0.08
0.65
0.025
PITCH
0.66
0.026
ǒ
mm
inches
Ǔ
2.362
0.093
1
8X
8X
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NTHD4502NT1

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ON Semiconductor
Description:
MOSFET 2N-CH 30V 2.2A CHIPFET
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