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PBSS5350TVL

P1-P3P4-P6P7-P9P10-P11
2004 Jan 13 3
NXP Semiconductors Product data sheet
50 V, 3 A
PNP low V
CEsat
(BISS) transistor
PBSS5350T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Operated under pulsed conditions: pulse width t
p
≤ 100 ms; duty cycle δ ≤ 0.25.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
2
.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
2
.
4. Operated under pulsed conditions: pulse width t
p
≤ 100 ms; duty cycle δ ≤ 0.25.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − −50 V
V
CEO
collector-emitter voltage open base − −50 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −2 A
I
CRP
repetitive peak collector current note 1 − −3 A
I
CM
peak collector current single peak − −5 A
I
B
base current (DC) − −0.5 A
P
tot
total power dissipation T
amb
≤ 25 °C; note 2 − 300 mW
T
amb
≤ 25 °C; note 3 − 480 mW
T
amb
≤ 25 °C; note 4 − 540 mW
T
amb
≤ 25 °C; notes 1 and 2 − 1.2 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th (j-a)
thermal resistance from junction to
ambient
in free air; note 1 417 K/W
in free air; note 2 260 K/W
in free air; note 3 230 K/W
in free air; notes 1 and 4 104 K/W
2004 Jan 13 4
NXP Semiconductors Product data sheet
50 V, 3 A
PNP low V
CEsat
(BISS) transistor
PBSS5350T
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −50 V; I
E
= 0 − − −100 nA
V
CB
= −50 V; I
E
= 0; T
j
= 150 °C − − −50 μA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
= 0 − − −100 nA
h
FE
DC current gain V
CE
= −2 V; I
C
= −100 mA 200 − −
V
CE
= −2 V; I
C
= −500 mA 200 − −
V
CE
= −2 V; I
C
= −1 A; note 1 200 − −
V
CE
= −2 V; I
C
= −2 A; note 1 130 − −
V
CE
= −2 V; I
C
= −3 A; note 1 80 − −
V
CEsat
collector-emitter saturation
voltage
I
C
= −500 mA; I
B
= −50 mA − − −90 mV
I
C
= −1 A; I
B
= −50 mA − − −180 mV
I
C
= −2 A; I
B
= −100 mA; note 1 − − −320 mV
I
C
= −2 A; I
B
= −200 mA; note 1 − − −270 mV
I
C
= −3 A; I
B
= −300 mA; note 1 − − −390 mV
R
CEsat
equivalent on-resistance I
C
= −2 A; I
B
= −200 mA; note 1 − 90 135 mΩ
V
BEsat
base-emitter saturation
voltage
I
C
= −2 A; I
B
= −100 mA; note 1 − − −1.1 V
I
C
= −3 A; I
B
= −300 mA; note 1 − − −1.2 V
V
BEon
base-emitter turn-on voltage V
CE
= −2 V; I
C
= −1 A; note 1 −1.2 − − V
f
T
transition frequency I
C
= −100 mA; V
CE
= −5 V;
f
= 100 MHz
100 − − MHz
C
c
collector capacitance V
CB
= −10 V; I
E
= I
e
= 0; f = 1 MHz − − 35 pF
2004 Jan 13 5
NXP Semiconductors Product data sheet
50 V, 3 A
PNP low V
CEsat
(BISS) transistor
PBSS5350T
handbook, halfpage
0
1000
200
400
600
800
MLD885
−10
−1
−1
(1)
−10
I
C
(mA)
h
FE
−10
2
−10
3
−10
4
(3)
(2)
Fig.2 DC current gain as a function of collector
current; typical values.
V
CE
= −2 V.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
MLD886
0
−1200
−400
−800
−10
−1
−1 −10
I
C
(mA)
V
BE
(mV)
−10
2
−10
3
−10
4
(1)
(3)
(2)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
V
CE
= −2 V.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
handbook, halfpage
MLD887
−100
−1300
−500
−900
−10
−1
−1 −10
I
C
(mA)
V
BEsat
(mV)
−10
2
−10
3
−10
4
(1)
(3)
(2)
Fig.4 Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 10.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
handbook, halfpage
MLD888
−100
−1300
−500
−900
−10
−1
−1 −10
I
C
(mA)
V
BEsat
(mV)
−10
2
−10
3
−10
4
(1)
(3)
(2)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
P1-P3P4-P6P7-P9P10-P11

PBSS5350TVL

Mfr. #:
Buy PBSS5350TVL
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PBSS5350T/TO-236AB/REEL 11" Q3
Lifecycle:
New from this manufacturer.
Delivery:
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