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PBSS5350TVL
P1-P3
P4-P6
P7-P9
P10-P11
2004 Jan 13
6
NXP Semico
nductors
Product dat
a sheet
50 V
, 3 A
PNP low V
CEsat
(BISS) transistor
PBSS5350T
handbook, halfpage
MLD889
−
10
−
10
3
−
10
2
−
10
−
1
−
1
−
10
I
C
(mA)
V
CEsat
(mV)
−
10
2
−
10
3
−
10
4
−
1
(3)
(2)
(1)
Fig.6
Collector-emitter saturation voltage as a
function of collector current; typic
al values.
I
C
/I
B
= 10.
(1)
T
amb
= 150
°
C.
(2)
T
amb
= 25
°
C.
(3)
T
amb
=
−
55
°
C.
handbook, halfpage
MLD890
−
10
−
10
3
−
10
2
−
10
−
1
−
1
−
10
I
C
(mA)
V
CEsat
(mV)
−
10
2
−
10
3
−
10
4
−
1
(3)
(2)
(1)
Fig.7
Collector-emitter saturation voltage as a
function of collector current; typic
al values.
I
C
/I
B
= 20.
(1)
T
amb
= 150
°
C.
(2)
T
amb
= 25
°
C.
(3)
T
amb
=
−
55
°
C.
handbook, halfpage
MLD891
−
10
4
−
10
3
−
10
2
−
10
−
1
−−
10
−
1
−
1
V
CEsat
(mV)
I
C
(mA)
−
10
−
10
2
−
10
3
−
10
4
(1)
(3)
(2)
Fig.8
Collector-emitter saturation voltage as a
function of collector current; typic
al values.
I
C
/I
B
= 50.
(1)
T
amb
= 150
°
C.
(2)
T
amb
= 25
°
C.
(3)
T
amb
=
−
55
°
C.
handbook, halfpage
MLD892
−
10
4
−
10
3
−
10
2
−
10
−
1
−
1
−
10
I
C
(mA)
V
CEsat
(mV)
−
10
2
−
10
3
−
10
4
−
10
(3)
(1)
(2)
Fig.9
Collector-emitter saturation voltage as a
function of collector current; typic
al values.
I
C
/I
B
= 100.
(1)
T
amb
= 150
°
C.
(2)
T
amb
= 25
°
C.
(3)
T
amb
=
−
55
°
C.
2004 Jan 13
7
NXP Semico
nductors
Product dat
a sheet
50 V
, 3 A
PNP low V
CEsat
(BISS) transistor
PBSS5350T
handbook, halfpage
10
3
10
2
10
1
10
−
2
10
−
1
MLD893
−
10
−
1
−
1
−
10
I
C
(mA)
R
CEsat
(
Ω
)
−
10
3
−
10
2
−
10
4
(1)
(3)
(2)
Fig.10
Equiva
lent on-resistan
ce as a function of
collector current;
typical
values.
I
C
/I
B
= 20.
(1)
T
amb
= 150
°
C.
(2)
T
amb
= 25
°
C.
(3)
T
amb
=
−
55
°
C.
2004 Jan 13
8
NXP Semico
nductors
Product dat
a sheet
50 V
, 3 A
PNP low V
CEsat
(BISS) transistor
PBSS5350T
PACKAGE OUTLINE
UNIT
A
1
max.
b
p
cD
E
e
1
H
E
L
p
Qw
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
IEC
JEDEC
JEITA
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
TO-236AB
b
p
D
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads
SOT2
3
P1-P3
P4-P6
P7-P9
P10-P11
PBSS5350TVL
Mfr. #:
Buy PBSS5350TVL
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PBSS5350T/TO-236AB/REEL 11" Q3
Lifecycle:
New from this manufacturer.
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