BSS159NH6327XTSA2

BSS159N
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with V
GS(th)
indicator on reel
• Qualified according to AEC Q101
• 100% lead-free; Halogen-free; RoHS compliant
V
DS
60 V
R
DS(on),max
8
Ω
I
DSS,min
0.13 A
Product Summary
PG-SOT-23
3
1
2
Type Package Pb-free Halogen-free Tape and Reel Information Marking
BSS159N PG-SOT-23 Yes Yes H6327: 3000 pcs/reel SGs
BSS159N PG-SOT-23 Yes Yes H6906: 3000 pcs/reel sorted in
V
GS(th)
bands
1)
SGs
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
A
=25 °C
0.23 A
T
A
=70 °C
0.18
Pulsed drain current
I
D,pulse
T
A
=25 °C
0.92
Reverse diode dv/dt dv /dt
I
D
=0.23 A, V
DS
=60 V,
di/dt=200 A/µs,
T
j,max
=150 °C
6 kV/µs
Gate source voltage
V
GS
±20 V
ESD Class JESD22-A114 -HBM 0(<250V)
Power dissipation
P
tot
T
A
=25 °C
0.36 W
Operating and storage temperature
T
j
, T
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
1)
see table on next page and diagram 11
Value
BSS159N PG-SOT-23 Yes Yes H6906: 3000 pcs/reel sorted in
V
GS(th)
bands
1)
SGs
Rev. 2.2 page 1 2009-07-29
BSS159N
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal characteristics
R
thJA
minimal footprint - - 350 K/W
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=-10 V, I
D
=250 µA
60 - - V
Gate threshold voltage
V
GS(th)
V
DS
=3 V, I
D
=26 µA
-3.5 -2.8 -2.4
Drain-source cutoff current
I
D(off)
V
DS
=60 V,
V
GS
=-10 V, T
j
=25 °C
- - 0.1 µA
V
DS
=60 V,
V
GS
=-10 V, T
j
=125 °C
--10
Gt l k t
I
V
20 V
V
0V
10
A
Values
Rev. 2.2 page 2 2009-07-29
Gate-source leakage current
I
GSS
V
GS
=20 V,
V
DS
=0 V
- - 10 n
A
On-state drain current
I
DSS
V
GS
=0 V, V
DS
=10 V
130 - - mA
Drain-source on-state resistance
R
DS(on)
V
GS
=0 V, I
D
=0.07 A
- 3.9 8
Ω
V
GS
=10 V, I
D
=0.16 A
- 1.7 3.5
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.16 A
0.1 0.19 - S
Threshold voltage V
GS(th)
sorted in bands
2)
J
V
GS(th)
V
DS
=3 V, I
D
=26 µA
-2.6 - -2.4 V
K -2.75 - -2.55
L -2.9 - -2.7
M -3.05 - -2.85
N -3.2 - -3
2)
Each reel contains transistors out of one band whose identifying letter is printed on the reel label.
A specific band cannot be ordered separately.
Rev. 2.2 page 2 2009-07-29
BSS159N
Parameter Symbol Conditions Unit
min. typ. max.
D
namic characteristics
Input capacitance
C
iss
-2939pF
Output capacitance
C
oss
- 7.4 10
Reverse transfer capacitance
C
rss
- 3.1 5
Turn-on delay time
t
d(on)
- 3.1 4.7 ns
Rise time
t
r
- 2.9 4.4
Turn-off delay time
t
d(off)
-913
Fall time
t
f
-913
Gate Charge Characteristics
Gate to source charge
Q
gs
- 0.22 - nC
Gate to drain charge
Q
gd
- 0.42 -
Gate charge total
Q
g
- 1.4 -
Gate plateau voltage
V
plateau
- -0.80 - V
Values
V
GS
=-3 V, V
DS
=25 V,
f=1 MHz
V
DD
=25 V,
V
GS
=-3…7 V,
I
D
=0.16 A, R
G
=6 Ω
V
DD
=48 V, I
D
=0.16 A,
V
GS
=-3 to 5 V
Rev. 2.2 page 3 2009-07-29
Reverse Diode
Diode continous forward current
I
S
- - 0.20 A
Diode pulse current
I
S,pulse
- - 0.91
Diode forward voltage
V
SD
V
GS
=-3 V, I
F
=0.16 A,
T
j
=25 °C
- 0.81 1.2 V
Reverse recovery time
t
rr
- 10.4 13 ns
Reverse recovery charge
Q
rr
- 3.3 4.1 nC
V
R
=30 V, I
F
=0.16 A,
di
F
/dt=100 A/µs
T
A
=25 °C
Rev. 2.2 page 3 2009-07-29

BSS159NH6327XTSA2

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 230mA SOT-23-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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