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BSS159NH6327XTSA2
P1-P3
P4-P6
P7-P9
BSS159N
1 Power dissipation
2 Drain current
P
tot
=f(
T
A
)
I
D
=f(
T
A
);
V
GS
≥
10 V
0
0.1
0.2
0.3
0.4
0
40
80
120
160
P
tot
[W]
T
A
[°C]
0
0.04
0.08
0.12
0.16
0.2
0.24
0
40
80
120
160
I
D
[A]
T
A
[°C]
Rev. 2.2
page 4
2009-07-29
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(
V
DS
);
T
A
=25 °C;
D
=0
Z
thJA
=f(
t
p
)
parameter:
D
=
t
p
/
T
100 ms
10 µs
100 µs
1 ms
10 ms
DC
10
0
10
1
10
2
10
-3
10
-2
10
-1
10
0
I
D
[A]
V
DS
[V]
limited by
on-state
resistance
single pul
se
0.01
0.02
0.05
0.1
0.2
0.5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Z
thJA
[K/W]
t
p
[s]
0
0.1
0.2
0.3
0.4
0
40
80
120
160
P
tot
[W]
T
A
[°C]
0
0.04
0.08
0.12
0.16
0.2
0.24
0
40
80
120
160
I
D
[A]
T
A
[°C]
Rev. 2.2
page 4
2009-07-29
BSS159N
5 Typ. output characteristics
6 Typ. drain-source on resistance
I
D
=f(
V
DS
);
T
j
=25 °C
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V
0.5 V
1 V
10 V
0
0.1
0.2
0.3
0.4
0.5
0.6
02468
1
0
I
D
[A]
V
DS
[V]
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V
0.5 V
1 V
10 V
0
2
4
6
8
10
0
0.2
0.4
0.6
R
DS(on)
[
Ω
]
I
D
[A]
Rev. 2.2
page 5
2009-07-29
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
g
fs
=f(
I
D
);
T
j
=25 °C
0
0.1
0.2
0.3
0.4
0.5
0.6
-4
-3
-2
-1
0
1
I
D
[A]
V
GS
[V]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.0
0.
1
0.2
0.3
g
fs
[S]
I
D
[A]
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V
0.5 V
1 V
10 V
0
0.1
0.2
0.3
0.4
0.5
0.6
02468
1
0
I
D
[A]
V
DS
[V]
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V
0.5 V
1 V
10 V
0
2
4
6
8
10
0
0.2
0.4
0.6
R
DS(on)
[
Ω
]
I
D
[A]
Rev. 2.2
page 5
2009-07-29
BSS159N
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(
T
j
);
I
D
=0.07 A;
V
GS
=0 V
V
GS(th)
=f(
T
j
);
V
DS
=3 V;
I
D
=26 µA
parameter:
I
D
typ
98 %
0
4
8
12
16
20
-60
-20
20
60
100
140
180
R
DS(on)
[
Ω
]
T
j
[°C]
typ
max
mi
n
-4
-3.6
-3.2
-2.8
-2.4
-2
-60
-20
20
60
100
140
180
V
GS(th)
[V]
T
j
[°C]
Rev. 2.2
page 6
2009-07-29
11 Threshold voltage bands
12 Typ. capacitances
I
D
=f(
V
GS
);
V
DS
=3 V;
T
j
=25 °C
C
=f(
V
DS
);
V
GS
=-3 V;
f
=1 MHz
26 µA
J
K
L
M
N
0.001
0.01
0.1
1
-3.5
-3
-2.
5
-2
I
D
[mA]
V
GS
[V]
typ
98 %
0
4
8
12
16
20
-60
-20
20
60
100
140
180
R
DS(on)
[
Ω
]
T
j
[°C]
typ
max
mi
n
-4
-3.6
-3.2
-2.8
-2.4
-2
-60
-20
20
60
100
140
180
V
GS(th)
[V]
T
j
[°C]
Ciss
Coss
Crss
10
0
10
1
10
2
01
0
2
0
3
0
C
[pF]
V
DS
[V]
Rev. 2.2
page 6
2009-07-29
P1-P3
P4-P6
P7-P9
BSS159NH6327XTSA2
Mfr. #:
Buy BSS159NH6327XTSA2
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 230mA SOT-23-3
Lifecycle:
New from this manufacturer.
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