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AD8510ARZ-REEL

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
AD8510/AD8512/AD8513
Rev. I | Page 4 of 20
ELECTRICAL CHARACTERISTICS
@ V
S
= ±15 V, V
CM
= 0 V, T
A
= 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage (B Grade)
1
V
OS
0.08 0.4 mV
−40°C < T
A
< +125°C 0.8 mV
Offset Voltage (A Grade) V
OS
0.1 1.0 mV
−40°C < T
A
< +125°C 1.8 mV
Input Bias Current I
B
25 80 pA
−40°C < T
A
< +85°C 0.7 nA
−40°C < T
A
< +125°C 10 nA
Input Offset Current I
OS
6 75 pA
−40°C < T
A
< +85°C 0.3 nA
−40°C < T
A
< +125°C 0.5 nA
Input Capacitance
Differential 12.5 pF
Common Mode 11.5 pF
Input Voltage Range −13.5 +13.0 V
Common-Mode Rejection Ratio CMRR V
CM
= −12.5 V to +12.5 V 86 108 dB
Large-Signal Voltage Gain A
VO
R
L
= 2 kΩ, V
CM
= 0 V,
V
O
= −13.5 V to +13.5 V
115 196 V/mV
Offset Voltage Drift (B Grade)
1
ΔV
OS
/ΔT 1.0 5 μV/°C
Offset Voltage Drift (A Grade) ΔV
OS
/ΔT 1.7 12 μV/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
R
L
= 10 kΩ +14.0 +14.2 V
Output Voltage Low V
OL
R
L
= 10 kΩ, −40°C < T
A
< +125°C −14.9 −14.6 V
Output Voltage High V
OH
R
L
= 2 kΩ +13.8 +14.1 V
Output Voltage Low V
OL
R
L
= 2 kΩ, −40°C < T
A
< +125°C –14.8 −14.5 V
Output Voltage High V
OH
R
L
= 600 Ω +13.5 +13.9 V
R
L
= 600 Ω, −40°C < T
A
< +125°C +11.4 V
Output Voltage Low V
OL
R
L
= 600 Ω −14.3 −13.8 V
R
L
= 600 Ω, −40°C < T
A
< +125°C −12.1 V
Output Current I
OUT
±70 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= ±4.5 V to ±18 V 86 dB
Supply Current/Amplifier I
SY
AD8510/AD8512/AD8513 V
O
= 0 V 2.2 2.5 mA
AD8510/AD8512 −40°C < T
A
< +125°C 2.6 mA
AD8513 −40°C < T
A
< +125°C 3.0 mA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 2 kΩ 20 V/μs
Gain Bandwidth Product GBP 8 MHz
Settling Time t
S
To 0.1%, 0 V to 10 V step, G = +1 0.5 μs
To 0.01%, 0 V to 10 V step, G = +1 0.9 μs
Total Harmonic Distortion (THD) + Noise THD + N 1 kHz, G = +1, R
L
= 2 kΩ 0.0005 %
Phase Margin φ
M
52 Degrees
AD8510/AD8512/AD8513
Rev. I | Page 5 of 20
Parameter Symbol Conditions Min Typ Max Unit
NOISE PERFORMANCE
Voltage Noise Density e
n
f = 10 Hz 34 nV/√Hz
f = 100 Hz 12 nV/√Hz
f = 1 kHz 8.0 10 nV/√Hz
f = 10 kHz 7.6 nV/√Hz
Peak-to-Peak Voltage Noise e
n
p-p 0.1 Hz to 10 Hz bandwidth 2.4 5.2 μV p-p
1
AD8510/AD8512 only.
AD8510/AD8512/AD8513
Rev. I | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage ±18 V
Input Voltage ±V
S
Output Short-Circuit Duration to GND Observe derating curves
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +125°C
Junction Temperature Range −65°C to +150°C
Lead Temperature (Soldering, 10 sec) 300°C
Electrostatic Discharge
(Human Body Model)
2000 V
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Table 4. Thermal Resistance
Package Type θ
JA
1
θ
JC
Unit
8-Lead MSOP (RM) 210 45 °C/W
8-Lead SOIC_N (R) 158 43 °C/W
14-Lead SOIC_N (R) 120 36 °C/W
14-Lead TSSOP (RU) 180 35 °C/W
1
θ
JA
is specified for worst-case conditions, that is, θ
JA
is specified for device
soldered in circuit board for surface-mount packages.
ESD CAUTION
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

AD8510ARZ-REEL

Mfr. #:
Buy AD8510ARZ-REEL
Manufacturer:
Analog Devices Inc.
Description:
Precision Amplifiers Lo Noise-Inpt Bias Crnt Wide BW JFET
Lifecycle:
New from this manufacturer.
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