HIP1011BCB

4
FN4640.5
November 18, 2004
Absolute Maximum Ratings Thermal Information
V
CC
, 12VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +14.0V
12VO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V12V
IN
+ 0.5V
12VO, 12VG, 3V5VG . . . . . . . . . . . . . . . . . . . . -0.5V to V
CC
+ 0.5V
M12VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -15.0V to + 0.5V
M12VO, M12VG. . . . . . . . . . . . . . . . . . . . . V
M12VIN
-0.5V to + 0.5V
3VISEN, 5VISEN . . . . . . . . . . . -0.5V to the lesser of V
CC
or + 7.0V
Voltage, Any Other Pin. . . . . . . . . . . . . . . . . . . . . . . -0.5V to + 7.0V
12VO Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
M12VO Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8A
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4KeV (HBM)
Operating Conditions
VCC Supply Voltage Range. . . . . . . . . . . . . . . . . +10.8V to +13.2V
12VO Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +0.5A
M12VO Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +0.1A
Temperature Range (T
A
) . . . . . . . . . . . . . . . . . . . . . . . 0
o
C to 70
o
C
Thermal Resistance (Typical, Note 1)
JA
(
o
C/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . 125
o
C
Maximum Storage Temperature Range . . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
Die Characteristics
Number of Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1.
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for
details.
2. All voltages are relative to GND, unless otherwise specified.
Electrical Specifications Nominal 5V and 3.3V Input Supply Voltages,
V
CC
= 12VIN = 12V, M12VIN = -12V, T
A
= T
J
= 0 to 70
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
5V/3.3V SUPPLY CONTROL
5V Overcurrent Threshold I
OC5V
See Figure 1, Typical Application - 8 - A
5V Overcurrent Threshold Voltage V
OC5V_1
V
OCSET
= 0.6V 30 36 42 mV
5V Overcurrent Threshold Voltage V
OC5V_2
V
OCSET
= 1.2V 66 72 79 mV
5V Turn-On Time
(PWRON High to 5VOUT = 4.75V)
t
ON5V
C
3V5VG
= 0.022F, C
5VOUT
= 2000F,
R
L
= 1
-6.5-ms
5VS Input Bias Current IB
5VS
PWRON = High -40 -26 -20 A
5VISEN Input Bias Current IB
5VISEN
PWRON = High -160 -140 -110 A
3V Overcurrent Threshold I
OC3V
See Figure 1, Typical Application 10 A
3V Overcurrent Threshold Voltage V
OC3V_1
V
OCSET
= 0.6V 42 49 56 mV
3V Overcurrent Threshold Voltage V
OC3V_2
V
OCSET
= 1.2V 88 95 102 mV
3V Turn-On Time
(PWRON High to 3VOUT = 3.00V)
t
ON3V
C
3V5VG
= 0.022F, C
3VOUT
= 2000F,
R
L
= 0.43
-6.5-ms
3VS Input Bias Current IB
3VS
PWRON = High -40 -26 -20 A
3VISEN Input Bias Current IB
3VISEN
PWRON = High -160 -140 -110 A
3V5VG V
OUT
High V
OUT_HI_35VG
3V5VG IOUT = 5 11 11.7 - V
Gate Output Charge Current IC
3V5VG
PWRON = High, V
3V5VG
= 2V 22.5 25.0 27.5 A
Gate Turn-On Time
(PWRON High to 3V5VG = 11V)
t
ON3V5V
C
3V5VG
= 0.1F - 280 500 s
Gate Turn-Off Time t
OFF3V5V
C
3V5VG
= 0.1F, 3V5VG from 9.5V to 1V - 13 17 s
Gate Turn-Off Time C
3V5VG
= 0.022F, 3V5VG Falling 90% to 10% - 2 - s
HIP1011B
5
FN4640.5
November 18, 2004
+12V SUPPLY CONTROL
On Resistance of Internal PMOS r
DS(ON)12
PWRON = High, I
D
= 0.5A, T
A
= T
J
= 25
o
C 0.18 0.3 0.35
Overcurrent Threshold I
OC12V_1
V
OCSET
= 0.6V 0.6 0.75 0.9 A
Overcurrent Threshold I
OC12V_2
V
OCSET
= 1.2V 1.25 1.50 1.8 A
Gate Charge Current IC
12VG
PWRON = High, V
12VG
= 3V 22.5 25 28.5 A
Turn-On Time (PWRON High to
12VG = 1V)
t
ON12V
C
12VG
= 0.022F-1620ms
Turn-Off Time t
OFF12V
C
12VG
= 0.1F, 12VG - 9 12 s
Turn-Off Time C
12VG
= 0.022F, 12VG Rising 10% - 90% - 3 - s
-12V SUPPLY CONTROL
On Resistance of Internal NMOS r
DS(ON)M12
PWRON = High, I
D
= 0.1A, T
A
= T
J
= 25
o
C 0.5 0.7 0.9
Overcurrent Threshold I
OC12V_1
V
OCSET
= 0.6V 0.15 0.18 0.25 A
Overcurrent Threshold I
OC12V_2
V
OCSET
= 1.2V 0.30 0.37 0.50 A
Gate Output Charge Current IC
M12VG
PWRON = High, V
3VG
= -4V 22.5 25 28.5 A
Turn-On Time (PWRON High to
M12VG = -1V)
t
ONM12V
C
M12VG
= 0.022F - 160 300 s
Turn-On Time (PWRON High to
M12VO = -10.8V)
t
ONM12V
C
M12VG
= 0.022F, C
M12VO
= 50F, R
L
= 120 -16-ms
Turn-Off Time t
OFFM12V
C
M12VG
= 0.1F, M12VG - 18 23 s
Turn-Off Time C
M12VG
= 0.022F, M12VG Falling 90% to 10% - 3 - s
M12VIN Input Bias Current IB
M12VIN
PWRON = High - 2 2.6 mA
CONTROL I/O PINS
Supply Current I
VCC
455.8mA
OCSET Current I
OCSET
95 100 105 A
Overcurrent Fault Response Time t
OC
- 500 960 ns
PWRON Threshold Voltage V
THPWRON
0.8 1.6 2.1 V
FLTN Output Low Voltage V
FLTN,OL
I
FLTN
= 2mA - 0.6 0.9 V
FLTN Output High Voltage V
FLTN,OH
I
FLTN
= 0 to -4mA 3.9 4.3 4.9 V
FLTN Output Latch Threshold V
FLTN,TH
1.45 1.8 2.25 V
12V Power On Reset Threshold V
POR,TH
V
CC
Voltage Falling 8.7 9.4 9.9 V
Electrical Specifications Nominal 5V and 3.3V Input Supply Voltages,
V
CC
= 12VIN = 12V, M12VIN = -12V, T
A
= T
J
= 0 to 70
o
C, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
HIP1011B
6
FN4640.5
November 18, 2004
Adjusting the Fault Reporting and Power
Supply Latch-Off Delay Times
Figure 5 illustrates the relationship between the FLTN signal
and the gate drive outputs. Duration
a, indicates the time
between FLTN starting to transition from High to Low,
(indicating a fault has occurred) and the start of the gate
drive outputs latching off. The latch-off is initiated by the
falling FLTN signal reaching the output latch threshold
voltage, VFLTN, TH. For additional details and wave forms
see HIP1011A Data Sheet FN4631. Table 1 illustrates the
effect of the FLTN capacitor on the response times.
Typical Performance Curves
FIGURE 1. r
ON
vs TEMPERATURE FIGURE 2. OC VTH vs TEMPERATURE (VR
OCSET
= 1.21V)
FIGURE 3. OCSET CURRENT vs TEMPERATURE FIGURE 4. V
CC
POWER ON RESET VTH vs TEMPERATURE
340
320
300
280
260
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
1000
900
800
700
600
PMOS r
ON
+ 12 (m)
NMOS r
ON
-12 (m)
TEMPERATURE (
o
C)
PMOS +12 r
ON
NMOS -12 r
ON
105
95
85
75
65
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
OC VTH (mV)
TEMPERATURE (
o
C)
5V OCVTH
3V OCVTH
102
101
100
99
98
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
I OCSET (A)
TEMPERATURE (
o
C)
9.5
9.4
9.3
9.2
9.1
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
V
POR
VTH (V)
TEMPERATURE (
o
C)
TABLE 1. RESPONSE TIME TABLE
0.001F0.1F10F
3V5VG Response
a 0.85s37s3.8ms
FIGURE 5. TIMING DIAGRAM
3V5VG
FLTN
a
T1 T2
V
FLTN,TH
HIP1011B

HIP1011BCB

Mfr. #:
Manufacturer:
Renesas / Intersil
Description:
IC CTRLR HOT PLUG PCI 16-SOIC
Lifecycle:
New from this manufacturer.
Delivery:
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