1;3 Semiconductors Product specification
Thyristor BTH151S-650R
High Repetitive Surge
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated thyristor in a plastic envelope, SYMBOL PARAMETER MAX. UNIT
suitable for surface mounting, intended for
use in applications requiring high V
DRM
, V
RRM
Repetitive peak off-state
bidirectional blocking voltage capability and voltages 650 V
high thermal cycling performance. This I
T(AV)
Average on-state current 7.5 A
thyristor has a high repetitive surge I
T(RMS)
RMS on-state current 12 A
specification which makes it suitable for I
TSM
Non-repetitive peak on-state current 110 A
applications where high inrush currents or I
TRM
Repetitive peak on-state current 60 A
stall currents are likely to occur on a
repetitive basis.
PINNING - SOT428 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DRM
, Repetitive peak off-state
V
RRM
voltages half sine wave; -
1
650 V
I
T(AV)
Average on-state current T
mb
≤ 103 ˚C
- 7.5 A
I
T(RMS)
RMS on-state current all conduction angles - 12 A
I
TSM
Non-repetitive peak half sine wave; T
j
= 25 ˚C prior to
on-state current surge
t = 10 ms - 110 A
t = 8.3 ms - 121 A
I
TRM
Repetitive peak on-state t = 10ms, τ = 3s, T
mb
≤ 45˚C, no. - 60 A
current of surges = 100k
I
2
tI
2
t for fusing t = 10 ms - 61 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 20 A; I
G
= 50 mA; - 50 A/μs
on-state current after dI
G
/dt = 50 mA/μs
triggering
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
V
RGM
Peak reverse gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
1
2
3
tab
ak
g
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
March 2001 1 Rev 1.001
