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BTH151S-650R,118

P1-P3P4-P6P7-P9
1;3 Semiconductors Product specification
Thyristor BTH151S-650R
High Repetitive Surge
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance - - 1.8 K/W
junction to mounting base
R
th j-a
Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 - 75 - K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current V
D
= 12 V; I
T
= 0.1 A - 2 15 mA
I
L
Latching current V
D
= 12 V; I
GT
= 0.1 A - 10 40 mA
I
H
Holding current V
D
= 12 V; I
GT
= 0.1 A - 7 20 mA
V
T
On-state voltage I
T
= 23 A - 1.4 1.75 V
V
GT
Gate trigger voltage V
D
= 12 V; I
T
= 0.1 A - 0.6 1.5 V
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 125 ˚C 0.25 0.4 - V
I
D
, I
R
Off-state leakage current V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dV
D
/dt Critical rate of rise of V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C;
off-state voltage exponential waveform;
Gate open circuit 50 130 - V/μs
R
GK
= 100 Ω 200 1000 - V/μs
t
gt
Gate controlled turn-on I
TM
= 40 A; V
D
= V
DRM(max)
; I
G
= 0.1 A; - 2 - μs
time dI
G
/dt = 5 A/μs
t
q
Circuit commutated V
D
= 67% V
DRM(max)
; T
j
= 125 ˚C; - 70 - μs
turn-off time I
TM
= 20 A; V
R
= 25 V; dI
TM
/dt = 30 A/μs;
dV
D
/dt = 50 V/μs; R
GK
= 100 Ω
Fig.1. Repetitive surge conditions. I
P
=60A (f=50Hz) at Tc=45˚C. Maximum number of cycles n=100k. Repetitive
cycle T=3 seconds minimum.
10ms
Ip = 60 A
3 s (Minimum)
March 2001 2 Rev 1.001
1;3 Semiconductors Product specification
Thyristor BTH151S-650R
High Repetitive Surge
Fig.2. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
/ I
T(AV)
.
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.5. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤ 103˚C.
Fig.7. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
012345678
0
5
10
15
a = 1.57
1.9
2.2
2.8
4
IF(AV) / A
Ptot / W Tmb(max) / C
125
conduction
angle
form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
a
116
107
98
1 10 100 1000
0
20
40
60
80
100
120
Number of half cycles at 50Hz
ITSM / A
T
I
TSM
time
I
Tj initial = 25 C max
T
1
0.01 0.1 1 10
0
5
10
15
20
25
surge duration / s
IT(RMS) / A
10
100
1000
10us 100us 1ms
10ms
T / s
ITSM / A
T
I
TSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
-50 0 50 100 150
0
5
10
15
Tmb / C
IT(RMS) / A
103 C
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
March 2001 3 Rev 1.001
1;3 Semiconductors Product specification
Thyristor BTH151S-650R
High Repetitive Surge
Fig.8. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
Fig.9. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
Fig.10. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.11. Typical and maximum on-state characteristic.
Fig.12. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.13. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IGT(Tj)
IGT(25 C)
0 0.5 1 1.5 2
0
5
10
15
20
25
30
VT / V
IT / A
Tj = 125 C
Tj = 25 C
Vo = 1.06 V
Rs = 0.0304 ohms
typ max
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
BT145
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
tp / s
Zth j-mb (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
t
p
P
t
D
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IH(Tj)
IH(25 C)
0 50 100 150
10
100
1000
10000
Tj / C
dVD/dt (V/us)
gate open circuit
RGK = 100 Ohms
March 2001 4 Rev 1.001
P1-P3P4-P6P7-P9

BTH151S-650R,118

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Buy BTH151S-650R,118
Manufacturer:
WeEn Semiconductors
Description:
SCRs TAPE13 TRIAC
Lifecycle:
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