ADG1334
Rev. 0 | Page 3 of 12
SPECIFICATIONS
DUAL SUPPLY
1
V
DD
= +15 V ± 10%, V
SS
= –15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
B Version
Parameter
+25°C
−40°C to
+105°C
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
SS
to V
DD
V
On Resistance (R
ON
) 130 230 Ω typ V
S
= ±10 V, I
S
= −10 mA; see Figure 11
200 Ω max V
DD
= +13.5 V, V
SS
= −13.5 V
On Resistance Match Between Channels (∆R
ON
) 5 Ω typ V
S
= ±10 V, I
S
= −10 mA
10 Ω max
On Resistance Flatness (R
FLAT (ON)
) 25 Ω typ V
S
= −5 V, 0 V, +5 V; I
S
= −10 mA
65 Ω max
LEAKAGE CURRENTS V
DD
= +16.5 V, V
SS
= −16.5 V
Source Off Leakage I
S
(Off) ±10 nA typ V
D
= ±10 V; V
S
= ±10 V; see Figure 12
Drain Off Leakage I
D
(Off) ±10 nA typ V
D
= ±10 V; V
S
= ±10 V; see Figure 12
Channel On Leakage I
D
, I
S
(On) ±10 nA typ V
S
= V
D
= ±10 V; see Figure 13
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
±0.005 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max
Digital Input Capacitance, C
IN
5 pF typ
DYNAMIC CHARACTERISTICS
2
T
ON
110 ns typ R
L
= 300 Ω, C
L
= 35 pF
130 150 ns max V
S
= 10 V; see Figure 14
T
OFF
65 ns typ R
L
= 300 Ω, C
L
= 35 pF
85 95 ns max V
S
= 10 V; see Figure 14
T
BBM
25 ns typ R
L
= 300 Ω, C
L
= 35 pF
10 ns min V
S1
= V
S2
= +10 V; see Figure 15
Charge Injection 2 pC typ V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 16
Off Isolation 80 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 17
Channel-to-Channel Crosstalk 85 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 19
−3 dB Bandwidth 700 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 18
C
S
(Off) 5 pF typ f = 1 MHz; V
S
= 0 V
C
D
(Off) 5 pF typ f = 1 MHz; V
S
= 0 V
C
D
, C
S
(On) 10 pF typ f = 1 MHz; V
S
= 0 V
POWER REQUIREMENTS V
DD
= +16.5 V, V
SS
= −16.5 V
I
DD
0.002 μA typ Digital inputs = 0 V or V
DD
1 μA max
I
DD
260 μA typ Digital inputs = 5 V
400 μA max
I
SS
0.002 μA typ Digital inputs = 0 V or V
DD
1 μA max
I
SS
0.002 μA typ Digital inputs = 5 V
1 μA max
1
Temperature range is B Version: −40°C to +105°C.
2
Guaranteed by design, not subject to production test.
ADG1334
Rev. 0 | Page 4 of 12
SINGLE SUPPLY
1
V
DD
= 12 V ± 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.
Table 2.
B Version
Parameter +25°C
−40°C to
+105°C
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to V
DD
V
On Resistance (R
ON
) 325 520 Ω typ V
S
= 0 V to10 V, I
S
= −10 mA; see Figure 11
500 Ω max V
DD
= 10.8 V, V
SS
= 0 V
On Resistance Match Between Channels (∆R
ON
) 10 Ω typ V
S
= 0 V to10 V, I
S
= −10 mA
20 Ω max
On Resistance Flatness (R
FLAT(ON)
) 65 Ω typ V
S
= 3 V, 6 V, 9 V, I
S
= −10 mA
LEAKAGE CURRENTS V
DD
= 13.2 V
Source Off Leakage I
S
(Off) ±10 nA typ V
S
= 1 V/10 V, V
D
= 10 V/1 V; see Figure 12
Drain Off Leakage I
D
(Off) ±10 nA typ V
S
= 1 V/10 V, V
D
= 10 V/1 V; see Figure 12
Channel On Leakage I
D
, I
S
(On) ±10 nA typ V
S
= V
D
= 1 V or 10 V, see Figure 13
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
±0.005 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max
Digital Input Capacitance, C
IN
3 pF typ f = 1 MHz
DYNAMIC CHARACTERISTICS
2
T
ON
135 ns typ R
L
= 300 Ω, C
L
= 35 pF
170 200 ns max V
S
= 8 V; see Figure 14
T
OFF
95 ns typ R
L
= 300 Ω, C
L
= 35 pF
115 140 ns max V
S
= 8 V; see Figure 14
T
BBM
50 ns typ R
L
= 300 Ω, C
L
= 35 pF
10 ns min V
S1
= V
S2
= 8 V; see Figure 15
Charge Injection 2 pC typ V
S
= 6 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 16
Off Isolation 80 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 17
Channel-to-Channel Crosstalk 85 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 19
−3 dB Bandwidth 500 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 18
C
S
(Off) 5 pF typ f = 1 MHz; V
S
= 6 V
C
D
(Off) 5 pF typ f = 1 MHz; V
S
= 6 V
C
D
, C
S
(On) 10 pF typ f = 1 MHz; V
S
= 6 V
POWER REQUIREMENTS V
DD
= 13.2 V
I
DD
0.002 μA typ Digital inputs = 0 V or V
DD
1 μA max
I
DD
260 μA typ Digital inputs = 5 V
420 μA max
1
Temperature range is B Version: −40°C to +105°C.
2
Guaranteed by design, not subject to production test.
ADG1334
Rev. 0 | Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter Rating
V
DD
to V
SS
35 V
V
DD
to GND −0.3 V to +25 V
V
SS
to GND +0.3 V to −25 V
Analog, Digital Inputs
1
V
SS
− 0.3 V to V
DD
+ 0.3 V
or 30 mA, whichever
occurs first
Continuous Current, S or D 24 mA
Peak Current, S or D (Pulsed at 1 ms,
10% Duty Cycle max)
100 mA
Operating Temperature Range
Industrial Temperature Range
(B Version)
−40°C to +105°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
SSOP Package
θ
JA
, Thermal Impedance 83.2°C/W
Reflow Soldering Peak Temperature,
Pb-free
260°C
1
Overvoltages at A, EN, S, or D are clamped by internal diodes. Current should
be limited to the maximum ratings given.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating may be applied at any one
time.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.

ADG1334BRSZ

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs Quad SPDT +-15V/12V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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