NTHD5904T1 Datasheet NTHD5904T1 | P1-P3

February, 2005 − Rev. XXX

1 Publication Order Number:

NTHD5904T1/D

NTHD5904T1

Power MOSFET

Dual N−Channel

3.1 Amps, 20 Volts

Features

• Low R

DS(on)

for Higher Efficiency

• Logic Level Gate Drive

• Miniature ChipFETt Surface Mount Package Saves Board Space

Applications

• Power Management in Portable and Battery−Powered Products; i.e.,

Cellular and Cordless Telephones and PCMCIA Cards

MAXIMUM RATINGS (T

A

= 25°C unless otherwise noted)

Rating

Symbol 5 secs

Steady

State

Unit

Drain−Source Voltage V

DS

20 V

Gate−Source Voltage V

GS

"12 V

Continuous Drain Current

(T

J

= 150°C) (Note 1)

T

A

= 25°C

T

A

= 85°C

I

D

"4.2

"3.0

"3.1

"2.2

A

Pulsed Drain Current I

DM

"10 A

Continuous Source Current

(Diode Conduction) (Note 1)

I

S

1.8 0.9 A

Maximum Power Dissipation

(Note 1)

T

A

= 25°C

T

A

= 85°C

P

D

2.1

1.1

0.6

W

Operating Junction and Storage

Temperature Range

T

J

, T

stg

−55 to +150 °C

1. Surface Mounted on 1″ x 1″ FR4 Board.

G

D

S

N−Channel MOSFET

1

G

S

2

N−Channel MOSFET

D

2

Device Package Shipping

ORDERING INFORMATION

NTHD5904T1 ChipFET 3000/Tape & Reel

ChipFET

CASE 1206A

STYLE 2

DUAL N−CHANNEL

3.1 AMPS, 20 VOLTS

R

DS(on)

= 75 mW

1

2

3

45

6

7

8

PIN CONNECTIONS

MARKING

DIAGRAM

A1

A1 = Specific Device Code

1

2

3

4

8

7

6

5

S

1

G

1

S

2

G

2

D

1

D

1

D

2

D

2

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NTHD5904T1

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2

THERMAL CHARACTERISTICS

Characteristic Symbol Typ Max Unit

Maximum Junction−to−Ambient (Note 2)

t v 5 sec

Steady State

R

thJA

50

90

60

110

°C/W

Maximum Junction−to−Foot (Drain)

Steady State

R

thJF

30 40 °C/W

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

Characteristic

Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 mA

0.6 − − V

Gate−Body Leakage I

GSS

V

DS

= 0 V, V

GS

= "12 V − − "100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 16 V, V

GS

= 0 V − − 1.0 mA

V

DS

= 16 V, V

GS

= 0 V,

T

J

= 85°C

− − 5.0

On−State Drain Current (Note 3) I

D(on)

V

DS

w 5.0 V, V

GS

= 4.5 V 10 − − A

Drain−Source On−State Resistance (Note 3) r

DS(on)

V

GS

= 4.5 V, I

D

= 3.1 A − 0.065 0.075 W

()

V

GS

= 2.5 V, I

D

= 2.3 A − 0.115 0.143

Forward Transconductance (Note 3) g

fs

V

DS

= 10 V, I

D

= 3.1 A − 8.0 − S

Diode Forward Voltage (Note 3) V

SD

I

S

= 0.9 A, V

GS

= 0 V − 0.8 1.2 V

Dynamic (Note 4)

Total Gate Charge

Q

g

V 10 V V 45 V

− 4.0 6.0

nC

Gate−Source Charge Q

gs

V

DS

= 10 V, V

GS

= 4.5 V,

I

D

= 3.1 A

− 0.6 −

Gate−Drain Charge Q

gd

I

D

= 3

.

1 A

− 1.3 −

Turn−On Delay Time t

d(on)

− 12 18

ns

Rise Time t

r

V

DD

= 10 V, R

L

= 10 W

I

D

^ 10 A V

GEN

= 4 5 V

− 35 55

Turn−Off Delay Time t

d(off)

I

D

^ 1.0 A, V

GEN

= 4.5 V,

R

G

= 6 W

− 19 30

Fall Time t

f

R

G

6 W

− 9.0 15

Source−Drain Reverse Recovery Time t

rr

I

F

= 0.9 A, di/dt = 100 A/ms

− 40 80

2. Surface Mounted on 1″ x 1″ FR4 Board.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

4. Guaranteed by design, not subject to production testing.

NTHD5904T1

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3

TYPICAL ELECTRICAL CHARACTERISTICS

C

oss

V

GS

= 5 thru 3 V

10

8

6

4

2

0

10

8

6

4

2

0

0 0.5 1.0 1.5 2.0 2.5 3.0

0 0.5 1.0 1.5 2.0 2.5

2.5 V

2 V

T

C

= −55°C

25°C

125°C

V

GS

= 4.5 V

V

GS

= 2.5 V

5

4

3

2

1

0

0234

0.30

0.25

0.15

0.05

0

0246810

600

300

200

100

0

048121620

C

iss

C

rss

V

DS

= 10 V

I

D

= 3.1 A

1.6

1.4

1.2

1.0

0.8

0.6

−50 −25 0 25 50 75 100 125 15

0

V

GS

= 4.5 V

I

D

= 3.1 A

1

1.5 V

3.

5

3.0

0.20

0.10

500

400

V

DS

, Drain−to−Source Voltage (V) V

GS

, Gate−to−Source Voltage (V)

I

D,

Drain Current (A)

I

D

, Drain Current (A)

V

DS

, Drain−to−Source Voltage (V)

C, Capacitance (pF)

r

DS(on),

On−Resistance (

Ω )

Q

g,

Total Gate Charge (nC)

V

GS,

Gate−to−Source Voltage (V)

(Normalized)

T

J

, Junction Temperature (°C)

I

D,

Drain Current (A)

r

DS(on),

On−Resistance (

Ω )

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

Figure 3. On−Resistance vs. Drain Current Figure 4. Capacitance

Figure 5. Gate Charge Figure 6. On−Resistance vs.

Junction Temperature

NTHD5904T1

NTHD5904T1

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