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NTHD5904T1

P1-P3P4-P6P7-P8
NTHD5904T1
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
1
10
0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150°C
T
J
= 25°C
0.20
0.15
0.10
0.05
0
012345
I
D
= 3.1 A
0.2
−0.8
−50 −25 0 25 50 75 100 125 150
I
D
= 250 mA
Power (W)
50
40
30
20
10
1010
−3 −2 −1
10 1 10 100 60
0
Time (sec)
0.4
0
−0.6
−0.4
−0.2
−0.0
10
−4
V
DS
, Drain−to−Source Voltage (V)
I
S,
Source Current (A)
V
GS
, Gate−to−Source Voltage (V)
r
DS(on),
On−Resistance (
Ω )
T
J
, Temperature (°C)
V
GS (th),
Varience (V)
Figure 7. Source−Drain Diode Forward Voltage Figure 8. On−Resistance vs. Gate−to−Source
Voltage
Figure 9. Threshold Voltage Figure 10. Single Pulse Power
Figure 11. Diode Forward Voltage vs. Current
0.2 0.40 0.6 0.8 1.0 1.2
5
4
3
2
1
0
−I
S
, SOURCE CURRENT (AMPS)
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
V
GS
= 0 V
T
J
= 25°C
NTHD5904T1
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS
2
1
0.1
0.01
10 1010
−4 −3 −2 −1
10 1 10
0.02
Square Wave Pulse Duration (sec)
Duty Cycle = 0.5
0.2
Single Pulse
0.1
0.05
Normalized Effective Transient
Thermal Impedance
2
1
0.1
0.01
10 1010
−4 −3 −2 −1
10 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Single Pulse
0.1
0.05
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90°C/W
3. T
JM
−
T
A
= P
DM
Z
thJA
(t)
4. Surface Mounted
t
1
t
2
P
DM
Notes:
t
1
t
2
Figure 12. Normalized Thermal Transient Impedance, Junction−to−Ambient
Figure 13. Normalized Thermal Transient Impedance, Junction−to−Foot
NTHD5904T1
http://onsemi.com
6
Notes
P1-P3P4-P6P7-P8

NTHD5904T1

Mfr. #:
Buy NTHD5904T1
Manufacturer:
ON Semiconductor
Description:
MOSFET 2N-CH 20V 3.1A CHIPFET
Lifecycle:
New from this manufacturer.
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