Not Available for New Designs, Use VS-HFA70FA120
HFA60FA120P
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Vishay Semiconductors
Revision: 28-Nov-11
1
Document Number: 94609
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED
®
Ultrafast Soft Recovery Diode, 60 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL approved file E78996
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
The dual diode series configuration (HFA60FA120P) is used
for output rectification or freewheeling/clamping operation
and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
PRODUCT SUMMARY
V
R
1200 V
V
F
(typical) 2.2 V
t
rr
(typical) 123 ns
I
F(DC)
at T
C
30 A at 112 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
R
1200 V
Continuous forward current I
F
T
C
= 112 °C 30
ASingle pulse forward current I
FSM
T
J
= 25 °C 350
Maximum repetitive forward current I
FRM
Rated V
R,
square wave, 20 kHz, T
C
= 60 °C 110
Maximum power dissipation per leg P
D
T
C
= 25 °C 240
W
T
C
= 100 °C 96
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 minute 2500 V
Operating junction and storage
temperature range
T
J
, T
Stg
- 55 to 150 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA 1200 - -
V
Forward voltage V
FM
I
F
= 30 A - 2.2 3.0
I
F
= 60 A - 2.7 3.8
I
F
= 60 A, T
J
= 150 °C - 3.4 -
Reverse leakage current I
RM
V
R
= V
R
rated - 1.0 75 μA
T
J
= 150 °C, V
R
= V
R
rated - 2.7 10 mA
