Not Available for New Designs, Use VS-HFA70FA120
HFA60FA120P
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Vishay Semiconductors
Revision: 28-Nov-11
5
Document Number: 94609
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Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
1
2
3
4
5
6
Device code
51324
6
HF A 60 FA 120 P
- HEXFRED
®
family
- Process designator (A = Electron irradiated)
- Average current (60 = 60 A)
- Package outline (FA = SOT-227)
- Voltage rating (120 = 1200 V)
- P = Lead (Pb)-free
