BUK9245-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 31 May 2010 3 of 14
NXP Semiconductors
BUK9245-55A
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175°C --55V
V
DGR
drain-gate voltage R
GS
=20kΩ --55V
V
GS
gate-source voltage -15 - 15 V
I
D
drain current T
mb
=25°C; V
GS
=5V; see Figure 1;
see Figure 3
--28A
T
mb
=100°C; V
GS
=5V; see Figure 1 --20A
I
DM
peak drain current T
mb
=25°C; t
p
≤ 10 µs; pulsed;
see Figure 3
--112A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 --70W
T
stg
storage temperature -55 - 175 °C
T
j
junction temperature -55 - 175 °C
Source-drain diode
I
S
source current T
mb
=25°C --28A
I
SM
peak source current t
p
≤ 10 µs; pulsed; T
mb
=25°C --112A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
=28A; V
sup
≤ 55 V; R
GS
=50Ω;
V
GS
=5V; T
j(init)
= 25 °C; unclamped
--62mJ
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03ng00
0
5
10
15
20
25
30
25 50 75 100 125 150 175 200
T
j
(°C)
I
D
(A)
T
mb
(°C)
0 20015050 100
40
80
120
P
der
(%)
0
