BUK9245-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 31 May 2010 6 of 14
NXP Semiconductors
BUK9245-55A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
=0.25mA; V
GS
=0V; T
j
=25°C 55--V
I
D
=0.25mA; V
GS
=0V; T
j
= -55 °C 50 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
= 175 °C;
see Figure 10
0.5--V
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 10
11.52V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 10
--2.3V
I
DSS
drain leakage current V
DS
=55V; V
GS
=0V; T
j
= 175 °C - - 500 µA
V
DS
=55V; V
GS
=0V; T
j
= 25 °C - 0.05 10 µA
I
GSS
gate leakage current V
DS
=0V; V
GS
=10V; T
j
= 25 °C - 2 100 nA
V
DS
=0V; V
GS
=-10V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=5A; T
j
= 25 °C - 27 40 mΩ
V
GS
=5V; I
D
=5A; T
j
=175°C;
see Figure 11; see Figure 12
--90mΩ
V
GS
=4.5V; I
D
=5A; T
j
=25°C --50mΩ
V
GS
=5V; I
D
=5A; T
j
=25°C;
see Figure 11; see Figure 12
- 3145mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=5A; V
DS
=44V; V
GS
=5V;
T
j
=25°C; see Figure 13
-14-nC
Q
GS
gate-source charge - 1.6 - nC
Q
GD
gate-drain charge - 6.3 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C; see Figure 14
- 750 1006 pF
C
oss
output capacitance - 140 166 pF
C
rss
reverse transfer capacitance - 97 132 pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=1.2Ω; V
GS
=5V;
R
G(ext)
=10Ω; T
j
=25°C
-10-ns
t
r
rise time - 132 - ns
t
d(off)
turn-off delay time - 38 - ns
t
f
fall time -112-ns
L
D
internal drain inductance measured from drain to centre of die - 2.5 - nH
L
S
internal source inductance measured from source lead to source
bond pad
-7.5-nH
Source-drain diode
V
SD
source-drain voltage I
S
=8A; V
GS
=0V; T
j
=25°C;
see Figure 15
- 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs;
V
GS
=-10V; V
DS
=30V; T
j
=25°C
-50-ns
Q
r
recovered charge - 53 - nC
