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SIGC57T120R3LEX1SA3

P1-P3P4-P6P7-P9
Industrial Power Control
IGBT
Data Sheet
TRENCHSTOP
TM
IGBT3 Chip
SIGC57T120R3LE
SIGC57T120R3LE
L7667N, L7667U, L7667F 2 Rev. 2.5, 13.08.2015
Table of Contents
Features and Applications ............................................................................................................................... 3
Mechanical Parameters .................................................................................................................................... 3
Maximum Ratings ............................................................................................................................................. 4
Static and Electrical Characteristics .............................................................................................................. 4
Further Electrical Characteristics ................................................................................................................... 5
Chip Drawing ..................................................................................................................................................... 6
Revision History ............................................................................................................................................... 7
Relevant Application Notes ............................................................................................................................. 7
Legal Disclaimer ............................................................................................................................................... 8
SIGC57T120R3LE
L7667N, L7667U, L7667F 3 Rev. 2.5, 13.08.2015
TRENCHSTOP
TM
IGBT3 Chip
Features:
1200V trench & field stop technology
Low turn-off losses
Short tail current
Positive temperature coefficient
Easy paralleling
Recommended for:
Power modules
Applications:
Drives
Chip Type
I
Cn
1
Die Size
Package
SIGC57T120R3LE
50A
7.6mm x 7.53mm
Sawn on foil
Mechanical Parameters
Die size
7.6 x 7.53
mm
2
Emitter pad size
See chip drawing
Gate pad size
1.319 x 0.820
Area total
52.228
Thickness
120
µm
Wafer size
200
mm
Maximum possible chips per wafer
458
Passivation frontside
Photoimide
Pad metal
3200nm AlSiCu
Backside metal
Ni Ag – system
To achieve a reliable solder connection it is strongly
recommended not to consume the Ni layer completely during
production process
Die bond
Electrically conductive epoxy glue and soft solder
Wire bond
Al, ≤500µm
Reject ink dot size
0.65mm; max. 1.2mm
Storage environment
for original and
sealed MBB bags
Ambient atmosphere air, temperature 17°C – 25°C,
<6 months
for open MBB bags
Acc. to IEC62258-3: atmosphere >99% Nitrogen or inert gas,
humidity <25%RH, temperature 17°C – 25°C, <6 months
1
Nominal collector current at T
C
=100°C for chip packaged in power modules, see application example cited on page 5.
P1-P3P4-P6P7-P9

SIGC57T120R3LEX1SA3

Mfr. #:
Buy SIGC57T120R3LEX1SA3
Manufacturer:
Infineon Technologies
Description:
IGBT 1200V 50A DIE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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