L7667N, L7667U, L7667F 4 Rev. 2.5, 13.08.2015
Maximum Ratings
Collector-emitter voltage, T
vj
=25C
DC collector current, limited by T
vj max
2
Pulsed collector current, t
p
limited by T
vj max
3
Junction temperature range
Operating junction temperature
Short circuit data
3 /
4
V
GE
=15V, V
CC
=900V, T
vj
=125°C
Reverse bias safe operating area
3
(RBSOA)
I
C,max
=100A, V
CE,max
=1200V, T
vj
125°C
Static Characteristics (tested on wafer), T
vj
=25
C
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Electrical Characteristics
3
Collector-emitter saturation voltage
V
GE
=15V, I
C
=50A,
T
vj
=125C
V
CE
=25V,
V
GE
=0V, f=1MHz
T
vj
=25C
Reverse transfer capacitance
Depending on thermal properties of assembly.
Not subject to production test - verified by design/characterization.
Allowed number of short circuits: <1000; time between short circuits: >1s.
