APT25M100J Datasheet APT25M100J | P1-P3

S

O

T

-2

2

7

IS OTO P

®

file # E145592

"UL Recognized"

G

S

D

N-Channel MOSFET

Absolute Maximum Ratings

Thermal and Mechanical Characteristics

G

D

S

Single die MOSFET

Unit

A

V

mJ

A

Unit

W

°C/W

°C

V

oz

g

in·lbf

N·m

Ratings

25

16

140

±30

2165

18

Min Typ Max

545

0.23

0.15

-55 150

2500

1.03

29.2

10

1.1

Parameter

Continuous Drain Current @ T

C

= 25°C

Continuous Drain Current @ T

C

= 100°C

Pulsed Drain Current

1

Gate-Source Voltage

Single Pulse Avalanche Energy

2

Avalanche Current,

Repetitive or Non-Repetitive

Characteristic

Total Power Dissipation @ T

C

= 25°C

Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat, Greased Surface

Operating and Storage Junction Temperature Range

RMS Voltage

(50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)

Package Weight

Terminals and Mounting Screws.

Symbol

I

D

I

DM

V

GS

E

AS

I

AR

Symbol

P

D

R

θ

JC

R

θ

CS

T

J

,T

STG

V

Isolation

W

T

Torque

Microsemi Website - http://www.microsemi.com

TYPICAL APPLICATIONS

• PFC and other boost converter

• Buck converter

• Two switch forward (asymmetrical bridge)

• Single switch forward

• Flyback

• Inverters

FEATURES

• Fast switching with low EMI/RFI

• Low R

DS(on)

• Ultra low C

rss

for improved noise immunity

• Low gate charge

• Avalanche energy rated

• RoHS compliant

APT25M100J

1000V, 25A, 0.33Ω Max

APT25M100J

Power MOS 8

™

is a high speed, high voltage N-channel switch-mode power MOSFET.

A proprietary planar stripe design yields excellent reliability and manufacturability. Low

switching loss is achieved with low input capacitance and ultra low C

rss

"Miller" capaci-

tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

help control slew rates during switching, resulting in low EMI and reliable paralleling,

even when switching at very high frequency. Reliability in ﬂ yback, boost, forward, and

other circuits is enhanced by the high avalanche energy capability.

050-8100 Rev C 7-2011

Static Characteristics T

J

= 25°C unless otherwise speciﬁ ed

Source-Drain Diode Characteristics

Dynamic Characteristics T

J

= 25°C unless otherwise speciﬁ ed

1

Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2

Starting at T

J

= 25°C, L = 13.36mH, R

G

= 2.2Ω, I

AS

= 18A.

3

Pulse test: Pulse Width < 380μs, duty cycle < 2%.

4

C

o(cr)

is deﬁ ned as a ﬁ xed capacitance with the same stored charge as C

OSS

with V

DS

= 67% of V

(BR)DSS

.

5 C

o(er)

is deﬁ ned as a ﬁ xed capacitance with the same stored energy as C

OSS

with V

DS

= 67% of V

(BR)DSS

. To calculate C

o(er)

for any value of

V

DS

less than V

(BR)DSS,

use this equation: C

o(er)

= -2.85E-7/V

DS

^2 + 5.04E-8/V

DS

+ 9.75E-11.

6

R

G

is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)

Microsemi reserves the right to change, without notice, the speciﬁ cations and information contained herein.

G

D

S

Unit

V

V/°C

Ω

V

mV/°C

μA

nA

Unit

A

V

ns

μC

V/ns

Unit

S

pF

nC

ns

Min Typ Max

1000

1.15

0.29 0.33

3 4 5

-10

100

500

±100

Min Typ Max

25

140

1

1165

33

10

Min Typ Max

39

9835

130

825

335

170

305

55

145

44

40

150

38

Test Conditions

V

GS

= 0V, I

D

= 250μA

Reference to 25°C, I

D

= 250μA

V

GS

= 10V, I

D

= 18A

V

GS

= V

DS

, I

D

= 2.5mA

V

DS

= 1000V T

J

= 25°C

V

GS

= 0V T

J

= 125°C

V

GS

= ±30V

Test Conditions

MOSFET symbol

showing the

integral reverse p-n

junction diode

(body diode)

I

SD

= 18A, T

J

= 25°C, V

GS

= 0V

I

SD

= 18A

3

di

SD

/dt = 100A/μs, T

J

= 25°C

I

SD

≤ 18A, di/dt ≤1000A/μs, V

DD

= 100V,

T

J

= 125°C

Test Conditions

V

DS

= 50V, I

D

= 18A

V

GS

= 0V, V

DS

= 25V

f = 1MHz

V

GS

= 0V, V

DS

= 0V to 667V

V

GS

= 0 to 10V, I

D

= 18A,

V

DS

= 500V

Resistive Switching

V

DD

= 667V, I

D

= 18A

R

G

= 2.2Ω

6

, V

GG

= 15V

Parameter

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefﬁ cient

Drain-Source On Resistance

3

Gate-Source Threshold Voltage

Threshold Voltage Temperature Coefﬁ cient

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

1

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Peak Recovery dv/dt

Parameter

Forward Transconductance

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance, Charge Related

Effective Output Capacitance, Energy Related

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Current Rise Time

Turn-Off Delay Time

Current Fall Time

Symbol

V

BR(DSS)

∆V

BR(DSS)

/∆T

J

R

DS(on)

V

GS(th)

∆V

GS(th)

/∆T

J

I

DSS

I

GSS

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

dv/dt

Symbol

g

fs

C

iss

C

rss

C

oss

C

o(cr)

4

C

o(er)

5

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

050-8100 Rev C 7-2011

APT25M100J

V

GS

= 6, 7, 8 & 9V

4.5V

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

V

GS

= 10V

5V

V

DS

> I

D(ON)

x R

DS(ON)

MAX.

250μSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

NORMALIZED TO

V

GS

= 10V @ 18A

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

C

oss

C

iss

I

D

= 18A

V

DS

= 800V

V

DS

= 200V

V

DS

= 500V

T

J

= 150°C

T

J

= 25°C

T

J

= 125°C

T

J

= 150°C

C

rss

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

V

GS

, GATE-TO-SOURCE VOLTAGE (V) g

fs

, TRANSCONDUCTANCE R

DS(ON)

, DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (A)

I

SD,

REVERSE DRAIN CURRENT (A) C, CAPACITANCE (pF) I

D

, DRAIN CURRENT (A) I

D

, DRIAN CURRENT (A)

V

DS(ON)

, DRAIN-TO-SOURCE VOLTAGE (V) V

DS

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 1, Output Characteristics Figure 2, Output Characteristics

T

J

, JUNCTION TEMPERATURE (°C) V

GS

, GATE-TO-SOURCE VOLTAGE (V)

Figure 3, R

DS(ON)

vs Junction Temperature Figure 4, Transfer Characteristics

I

D

, DRAIN CURRENT (A) V

DS

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 5, Gain vs Drain Current Figure 6, Capacitance vs Drain-to-Source Voltage

Q

g

, TOTAL GATE CHARGE (nC) V

SD

, SOURCE-TO-DRAIN VOLTAGE (V)

Figure 7, Gate Charge vs Gate-to-Source Voltage Figure 8, Reverse Drain Current vs Source-to-Drain Voltage

0 5 10 15 20 25 30 0 5 10 15 20 25 30

-55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8

0 5 10 15 20 25 0 200 400 600 800 1000

0 50 100 150 200 250 300 350 400 0 0.3 0.6 0.9 1.2 1.5

120

100

80

60

40

20

0

3.0

2.5

2.0

1.5

1.0

0.5

0

50

40

30

20

10

0

16

14

12

10

8

6

4

2

0

40

35

30

25

20

15

10

5

0

140

120

100

80

60

40

20

0

20,000

10,000

1000

100

10

140

120

100

80

60

40

20

0

APT25M100J

050-8100 Rev C 7-2011

APT25M100J

APT25M100J

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