APT25M100J

31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M 4
(4 places )
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source Drai n
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Emitter terminals are shorte d
internally. Current handlin g
capability is equal for either
Source terminal .
SOT-227 (ISOTOP
®
) Package Outline
Dimensions in Millimeters (Inches)
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
D = 0.9
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
t
1
= Pulse Duration
1ms
100ms
R
ds(on)
Scaling for Different Case & Junction
Temperatures:
I
D
= I
D(T
C
= 25
°
C)
*(T
J
- T
C
)/125
DC line
100μs
I
DM
10ms
13μs
100μs
I
DM
100ms
10ms
13μs
R
ds(on)
DC line
T
J
= 150°C
T
C
= 25°C
1ms
T
J
= 125°C
T
C
= 75°C
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V) V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area Figure 10, Maximum Forward Safe Operating Area
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
I
D
, DRAIN CURRENT (A)
1 10 100 1000 1 10 100 1000
0.25
0.20
0.15
0.10
0.05
0
200
100
10
1
0.1
200
100
10
1
0.1
APT25M100J
050-8100 Rev C 7-2011

APT25M100J

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Power MOSFET - MOS8
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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