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TSM301K12CQ RFG

P1-P3P4-P6P7-P7
TSM301K12
20V P-Channel MOSFET with Schottky Diode
1/7
Version: C12
T
DFN
2
x
2
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(mΩ) I
(A)
-20
94 @ V
GS
= -4.5V -2.8
131 @ V
GS
= -2.5V -2.3
185 @ V
GS
= -1.8V -0.54
SCHOTTKY PRODUCT SUMMARY
V
R
(V) V
F
(V) I
F
(A)
20 0.5 2
Features
● Configuration with MOSFET and Low Vf SKY
● Package low profile 0.75mm (Typ)
● Independent Pin Out for Design Flexibility
Application
● Load Switch for Portable Applications
● DC-DC Buck Circuit
● Li-ion Battery Applications
● Cellular Charger Switch
Ordering Information
Part No. Package Packing
TSM301K12CQ RFG
TDFN 2x2 3Kpcs / 7” Reel
Note: “G” denotes for Halogen Free
MOSFET Absolute Maximum Rating
(T
A
=25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
-20 V
Gate-Source Voltage V
GS
±12 V
Continuous Drain Current (Note 1,2) I
D
-4.5 A
Pulsed Drain Current I
DM
-8 A
Maximum Power Dissipation
T
C
=25
o
C
P
D
6.5 W
T
A
=25
o
C (Note 2)
1.56 W
Operating Junction Temperature T
J
+150
o
C
Operating Junction and Storage Temperature Range T
J
, T
STG
- 55 to +150
o
C
Schottky Absolute Maximum Rating
(T
A
=25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Reverse Voltage V
R
20 V
Average Forward Current (Note 1,2) I
F
2 A
Pulsed Forward Current I
FM
5 A
Maximum Power Dissipation (Note 1)
T
C
=25
o
C
P
D
6.8 W
T
A
=25
o
C (Note 2)
1.47 W
Block Diagram
P-Channel MOSFET with Schottky Diode
Pin
Definition
:
1. Anode 6. Cathode
2. NC 5. Gate
3. Drain 4. Source
TSM301K12
20V P-Channel MOSFET with Schottky Diode
2/7
Version: C12
Thermal Resistance Ratings
Parameter Symbol Limit Unit
MOSFET
Thermal Resistance-Junction to Ambient
T
≤
5s
RӨ
JA
80
o
C/W
Steady State 120
o
C/W
Schottky
Thermal Resistance-Junction to Ambient
T
≤
5s
RӨ
JA
85
o
C/W
Steady State 130
o
C/W
Notes:
1. Surface mounted on 1” x 1” (2 oz) FAR4 board,
2. t
≤
5s
MOSFET Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= -250uA BV
DSS
-20 -- -- V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= -250µA V
GS(TH)
-0.5 -- -- V
Gate Body Leakage V
GS
= ±12V, V
DS
= 0V I
GSS
-- -- ±100 nA
Zero Gate Voltage Drain Current V
DS
=-20V, V
GS
= 0V I
DSS
-- -- -1 µA
Drain-Source On-State Resistance
a
V
GS
= -4.5V, I
D
= -2.8A
R
DS(ON)
-- -- 94
mΩ V
GS
= -2.5V, I
D
= -2.3A -- -- 131
V
GS
= -1.8V, I
D
= -0.54A -- -- 185
Diode Forward Voltage I
S
= -1.6A, V
GS
= 0V V
SD
-- -- -1.2 V
Dynamic
b
Total Gate Charge
V
DS
= -6V, I
D
= -2.8A,
V
GS
= -5V
Q
g
-- 5.2 10
nC
Gate-Source Charge Q
gs
-- 1.36 --
Gate-Drain Charge Q
gd
-- 0.6 --
Input Capacitance
VGS=0V, VDS=-6V,
f =1.0MHz
C
iss
-- 5.2 --
pF
Output Capacitance C
oss
-- 9.7 --
Reverse Transfer Capacitance C
rss
-- 19 --
Switching
c
Turn-On Delay Time
VDS=-15V, RD=15Ω,
RG=6Ω, VGS=-10V
t
d(on)
-- 29 --
nS
Turn-On Rise Time t
r
-- 295 --
Turn-Off Delay Time t
d(off)
-- 170 --
Turn-Off Fall Time t
f
-- 65 --
Schottky Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max Unit
Forward Voltage Drop I
F
= 1A V
F
-- -- 0.5 V
Maximum Reverse Leakage
Current
V
R
= 5V
I
Rm
-- 0.015
0.08
mA
V
R
= 20V -- 0.02 0.10
Junction Capacitance V
R
= 10V C
T
-- 60 -- pF
Notes:
a. pulse test: PW
≤
300µS, duty cycle
≤
2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
TSM301K12
20V P-Channel MOSFET with Schottky Diode
3/7
Version: C12
MOSFET Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
P1-P3P4-P6P7-P7

TSM301K12CQ RFG

Mfr. #:
Buy TSM301K12CQ RFG
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET 20V P channel Mosfet with schottky diode
Lifecycle:
New from this manufacturer.
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