TSM301K12CQ RFG

TSM301K12
20V P-Channel MOSFET with Schottky Diode
4/7
Version: C12
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
TSM301K12
20V P-Channel MOSFET with Schottky Diode
5/7
Version: C12
SCHOTTKY Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Typical Forward Current Derating Curve
Typical Instantaneous Forward Characteristics
Typical Reverse Characteristics
Typical Junction Capacitance
Maximum Repetitive Forward Surge Current
TSM301K12
20V P-Channel MOSFET with Schottky Diode
6/7
Version: C12
TDFN 2x2 Mechanical Drawing
Marking Diagram
Y
= Year Code
M
= Month Code for
Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
DIM
MILLIMETERS INCHES
MIN MAX MIN MAX
A 1.95 2.05 0.0768
0.0807
B 1.95 2.05 0.0768
0.0807
C 0.50 0.60 0.0197
0.0236
D 0.30 0.40 0.0118
0.0157
E 0.20 0.30 0.0079
0.0118
F 0.65 BSC 0.0256 BSC
G 0.75 0.85 0.0295
0.0335
H 0.70 0.80 0.0276
0.0315
J -- 0.05 - 0.0020
K 0.195 0.211 0.0077
0.0083

TSM301K12CQ RFG

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET 20V P channel Mosfet with schottky diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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