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20070404a
MIAA10WF600TMH
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Advanced Technical Information
Output Inverter D1 - D6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
max. repetitve reverse voltage
T
VJ
= 150°C 600 V
I
F25
I
F80
forward current
T
C
= 25°C
T
C
= 80°C
22
14
A
A
V
F
forward voltage
I
F
= 10 A; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C
1.7
1.4
2.2 V
V
Q
rr
I
RM
t
rr
E
rec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
V
R
= 300 V
di
F
/dt = -300 A/µs T
VJ
= 125°C
I
F
= 10 A; V
GE
= 0 V
0.3
8.8
95
22
µC
A
ns
µJ
R
thJC
R
thCH
thermal resistance junction to case
thermal resistance case to heatsink
(per diode)
0.85
2.5 K/W
K/W
Ouput Inverter T1 - T6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
collector emitter voltage
T
VJ
= 150°C 600 V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
I
C25
I
C80
collector current
T
C
= 25°C
T
C
= 80°C
18
13
A
A
P
tot
total power dissipation
T
C
= 25°C 70 W
V
CE(sat)
collector emitter saturation voltage
I
C
= 10 A; V
GE
= 15 V T
VJ
= 25°C
T
VJ
= 125°C
2.1
2.3
2.6 V
V
V
GE(th)
gate emitter threshold voltage
I
C
= 0.35 A; V
GE
= V
CE
T
VJ
= 25°C 4.5 5.5 6.5 V
I
CES
collector emitter leakage current
V
CE
= V
CES
; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C 0.8
0.6 mA
mA
I
GES
gate emitter leakage current
V
GE
= ±20 V 150 nA
C
ies
input capacitance
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 450 pF
Q
G(on)
total gate charge
V
CE
= 300 V; V
GE
= 15 V; I
C
= 10 A 50 nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load T
VJ
= 25°C
V
CE
= 300 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 82 W
32
35
180
110
0.17
0.2
ns
ns
ns
ns
mJ
mJ
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load T
VJ
= 125°C
V
CE
= 300 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 82 W
32
35
190
170
0.27
0.42
ns
ns
ns
ns
mJ
mJ
RBSOA
reverse bias safe operating area
V
GE
= ±15 V; R
G
= 82 W; I
C
= 20 A T
VJ
= 125°C
V
CEK
< V
CES
-L
S
·d
I
/dt V
I
SC
(SCSOA)
short circuit safe operating area
V
CE
= 360 V; V
GE
= ±15 V; T
VJ
= 125°C
R
G
= 82 W; t
p
= 10 µs; non-repetitive
40 A
R
thJC
R
thCH
thermal resistance junction to case
thermal resistance case to heatsink
(per IGBT)
0.6
1.8 K/W
K/W
T
C
= 25°C unless otherwise stated
