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MIAA10WF600TMH
P1-P3
P4-P6
P7-P7
© 2007 IXYS All rights reser
ved
4 - 7
20070404a
MIAA10WF600TMH
IXYS reserves the right to change limits, test conditions and dimensions.
Adv
anced
T
echnical Inf
or
mation
Part number
M = Module
I = IGBT
A = IGBT (NPT)
A = Gen 1 / std
10 = Current Rating [A]
WF = 6-Pack + 3~ Rectifier Bridge
600 = Rev
erse V
oltage [V]
T = NTC
MH = MiniPack2
Ordering
Part Name
Marking on Product
Delivering Mode
Base Qty
Ordering Code
Standard
MIAA 10
WF 600 TMH
MIAA10WF600TMH
Box
20
504694
Circuit Dia
gram
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
A
12
40,6
55,9
12,4
25,6
23
26,6
39,6
45,6
14
Ø4
0,5
12
17 ±0,35
20,5 ±0,50
8,15 ±0,35
A ( 2 :
1 )
1,4
1,8
3,6
1,2
2,2
0,635
Pin positions with tolerance Ø 0.4
G1
G3
G5
G2
G4
G6
U
V
W
NTC1
L1
L2
L3
N
EU
EV
EW
P
P1
D8
D10
D9
D11
NTC2
D1
D3
D5
D2
D4
D6
T1
T3
T5
T2
T4
T6
D12
D13
16,51
20,32
24,13
26,37
27,94
31,75
35,56
44,45
48,26
10,16
17,78
19,05
22,86
31,75
P1
P
N
L1
L3
NTC1
G3
V
G1
U
G5
W
EW
G6
EV
G4
EU
G2
NTC2
Product Marking
L2
© 2007 IXYS All rights reser
ved
5 - 7
20070404a
MIAA10WF600TMH
IXYS reserves the right to change limits, test conditions and dimensions.
Adv
anced
T
echnical Inf
or
mation
T
ypical output character
istics
,
V
GE
= 15
V
T
ypical output character
istics (125°C)
T
ypical transfer characteristics
T
ypical forward char
acteristics of freewheeling diode
0
2
4
6
8
10
12
14
16
18
20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
V
f [
V
]
If [A]
25 °
C
125
°C
0
2
4
6
8
10
12
14
16
18
20
0.0
0.4
0.8
1.2
1
.6
2.
0
2.4
2.8
3.2
3.6
V
ce
[V
]
Ic [A]
25 °
C
125
°C
0
2
4
6
8
10
12
14
16
18
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
ce
[V
]
Ic [A]
V
ge=
19V
V
ge=
17V
V
ge=
15V
V
ge=
13V
V
ge=
11V
V
ge=
9V
0
2
4
6
8
10
12
14
16
18
20
5
6
7
8
9
10
11
12
13
14
V
ge
[V
]
Ic [A]
25 °
C
125
°C
© 2007 IXYS All rights reser
ved
6 - 7
20070404a
MIAA10WF600TMH
IXYS reserves the right to change limits, test conditions and dimensions.
Adv
anced
T
echnical Inf
or
mation
T
ypical tur
n on gate charge
T
ypical switching energy v
ersus collector current
T
ypical switching energy v
ersus gate resistance
T
ypical tur
n-off characteristics of free wheeling diode
330
W
8
2W
150
W
8
2W
330
W
150
W
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
10.5
11
125
150
175
200
225
250
275
300
325
dif
/dt
[A/µ
s
]
Irr [A]
90
95
100
105
110
115
120
125
130
135
140
145
150
155
160
trr [ns]
I
rr
trr
I
f
=
10A
V
c
e =
300V
V
ge =
+/-15V
T
v
j
=
125
°C
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0
5
10
15
20
25
30
35
40
45
50
55
60
Q
g
[n
C]
Vge [[V]
I
c = 10
A
V
c
e =
300V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
2
4
6
8
10
12
1
4
16
18
20
2
2
Ic, If [A]
E [mJ]
E
on
E
of
f
E
r
ec
V
c
e =
300V
V
ge =
+/-15V
R
g =
82
W
T
v
j
=
125
°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
50
75
1
00
125
150
175
200
225
250
275
300
325
350
R
g [
W
]
E [mJ]
E
on
E
of
f
E
r
ec
I
c, I
f
= 10
A
V
c
e =
300V
V
ge =
+/-15V
T
v
j
=
125
°C
P1-P3
P4-P6
P7-P7
MIAA10WF600TMH
Mfr. #:
Buy MIAA10WF600TMH
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 10 Amps 600V
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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