IXFN360N10T Datasheet IXFN360N10T | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 175°C 100 V

V

DGR

T

J

= 25°C to 175°C, R

GS

= 1MΩ 100 V

V

GSS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25°C (Chip Capability) 360 A

I

LRMS

Lead Current Limit, RMS 200 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

900 A

I

A

T

C

= 25°C 100 A

E

AS

T

C

= 25°C2J

P

D

T

C

= 25°C 830 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

V

ISOL

50/60 Hz, RMS t = 1 Minute 2500 V~

I

ISOL

≤ 1mA t = 1 Second 3000 V~

M

d

Mounting Torque 1.5/13 Nm/lb.in.

Terminal Connection Torque 1.3/11.5 Nm/lb.in.

Weight 30 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 1mA 100 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250μA 2.5 4.5 V

I

GSS

V

GS

= ±20V, V

DS

= 0V ±200 nA

I

DSS

V

DS

= V

DSS

50 μA

V

GS

= 0V T

J

= 150°C 5.0 mA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 2.6 mΩ

TrenchGate Power

MOSFET HiperFET

TM

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

IXFN360N10T

V

DSS

= 100V

I

D25

= 360A

R

DS(on)

≤≤

≤ 2.6m

ΩΩ

Ω

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

( Gate Return ) Terminal.

DS100088(12/08)

miniBLOC, SOT-227

E153432

G

D

S

G = Gate D = Drain

S = Source

Preliminary Technical Information

Features

z

International Standard Package

z

175°C Operating Temperature

z

High Current Handling Capability

z

Avalanche Rated

z

Fast Intrinsic Rectifier

z

Low R

DS(on)

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

DC-DC Converters

z

Battery Chargers

z

Switched-Mode and Resonant-Mode

Power Supplies

z

DC Choppers

z

AC Motor Drives

z

Uninterruptible Power Supplies

z

High Speed Power Switching

Applications

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN360N10T

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

SOT-227B (IXFN) Outline

(M4 screws (4x) supplied)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 10V, I

D

= 60A, Note 1 100 160 S

C

iss

36 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 3130 pF

C

rss

330 pF

t

d(on)

52 ns

t

r

142 ns

t

d(off)

63 ns

t

f

26 ns

Q

g(on)

505 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

145 nC

Q

gd

135 nC

R

thJC

0.18 °C/W

R

thCS

0.05 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 360 A

I

SM

Repetitive, Pulse Width Limited by T

JM

1000 A

V

SD

I

F

= 100A, V

GS

= 0V, Note 1 1.2 V

t

rr

82 ns

I

RM

4.8 A

Q

RM

196 nC

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 100A

R

G

= 1Ω (External)

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

I

F

= 100A, V

GS

= 0V

-di/dt = 100A/μs

V

R

= 50V

IXFN360N10T

Fig. 1. Output Characteristics

@ 25ºC

0

40

80

120

160

200

240

280

320

360

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

8V

7V

5V

6V

Fig. 2. Output Characteristics

@ 150ºC

0

40

80

120

160

200

240

280

320

360

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V

8V

7

V

5

V

6

V

Fig. 3. R

DS(on)

Normalized to I

D

= 180A Value

vs. Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 350A

I

D

= 180A

Fig. 4. R

DS(on)

Normalized to I

D

= 180A Value

vs. Drain Current

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

0 30 60 90 120 150 180 210 240 270 300 330 360

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

15V

- - - -

T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Input Admittance

0

40

80

120

160

200

240

280

3.43.84.24.65.05.45.86.2

V

GS

- Volts

I

D

- Amperes

T

J

= 150ºC

25ºC

- 40ºC

Fig. 5. Drain Current vs. Case Temperature

0

20

40

60

80

100

120

140

160

180

200

220

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

IXYS REF: F_360N10T(2x7V)12-04-08

IXFN360N10T

IXFN360N10T

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