© 2008 IXYS CORPORATION, All rights reserved
IXFN360N10T
IXYS REF: F_360N10T(2x7V)12-04-08
Fig. 13. Resistive Turn-on
Rise Time vs. Drain Current
40
80
120
160
200
240
280
320
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 1
V
GS
= 10V
V
DS
= 50V
25ºC < T
J
< 125ºC
Fig. 14. Resistive Turn-on
Switching Times vs. Gate Resistance
0
100
200
300
400
500
600
700
800
12345678910
R
G
- Ohms
t
r
- Nanoseconds
20
40
60
80
100
120
140
160
180
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 100A
I
D
= 200A
Fig. 15. Resistive Turn-off
Switching Times vs. Junction Temperature
10
15
20
25
30
35
40
45
50
55
60
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
50
55
60
65
70
75
80
85
90
95
100
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 50V
I
D
= 100A
I
D
= 200A
Fig. 16. Resistive Turn-off
Switching Times vs. Drain Current
20
22
24
26
28
30
32
34
36
38
40
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
f
- Nanoseconds
40
50
60
70
80
90
100
110
120
130
140
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 50V
T
J
= 125ºC, 25ºC
Fig. 12. Resistive Turn-on
Rise Time vs. Junction Temperature
100
140
180
220
260
300
340
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1
V
GS
= 10V
V
DS
= 50V
I
D
= 100A
I
D
= 200A
Fig. 17. Resistive Turn-off
Switching Times vs. Gate Resistance
0
50
100
150
200
250
300
350
400
450
500
550
600
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R
G
- Ohms
t
f
- Nanoseconds
0
100
200
300
400
500
600
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 100A
I
D
= 200A
