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BTS308 E3059

P1-P3P4-P6P7-P9P10-P12P13-P14
PROFET
®
BTS 308
Semiconductor Group Page 1 of 14 2003-Oct-01
Smart Highside Power Switch
Features
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Thermal shutdown
•
Overvoltage protection (including load dump)
•
Fast demagnetization of inductive loads
•
Reverse battery protection
1
)
•
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
•
Open drain diagnostic output
•
Open load detection in OFF-state
•
CMOS compatible input
•
Loss of ground and loss of V
bb
protection
•
Electrostatic discharge (ESD) protection
Application
•
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
•
Most suitable for inductive loads
•
Replaces electromechanical relays, fuses and discrete circuits
•
Fast switching
•
Not suitable for lamp loads
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
technology. Providing embedded protective functions.
+ V
bb
IN
ST
Signal GND
ESD
PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection
Short circuit
detection
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltage
protection
1
)
With external current limit (e.g. resistor R
GND
=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Product Summary
Overvoltage protection V
bb(AZ)
60 V
Operating voltage
V
bb(on)
4.7 ... 34 V
On-state resistance R
ON
300
mΩ
Load current (ISO) I
L(ISO)
1.3 A
TO-220AB/5
5
Standard
1
5
Straight leads
1
5
SMD
BTS 308
Semiconductor Group Page 2 2003-Oct-01
Pin Symbol Function
1 GND - Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3 V
bb
+ Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5 OUT
(Load, L)
O Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3) V
bb
60 V
Load current (Short circuit current, see page 4) I
L
self-limited A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC), T
C
≤ 25 °C P
tot
50 W
Electrostatic discharge capability (ESD) IN, ST:
(Human Body Model) all other pins:
V
ESD
1
tbd (>1)
kV
Input voltage (DC) V
IN
-10 ... +16 V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
I
IN
I
ST
±5.0
±5.0
mA
Thermal resistance chip - case:
junction - ambient (free air):
R
thJC
R
thJA
≤ 2.5
≤ 75
K/W
BTS 308
Semiconductor Group Page 3 2003-Oct-01
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, V
bb
= 24 V unless otherwise specified
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 0.8 A, V
bb
= 12V T
j
=25 °C:
T
j
=150 °C:
R
ON
--
270
540
300
600
mΩ
Nominal load current, ISO Norm (pin 3 to 5)
V
ON
= 0.5 V, T
C
= 85 °C
I
L(ISO)
1.18 1.3
-- A
Output current (pin 5) while GND disconnected or
GND pulled up, V
bb
=30 V, V
IN
= 0, see diagram
page 7
I
L(GNDhigh)
-- -- 1 mA
Turn-on time to 90% V
OUT
:
Turn-off time to 10% V
OUT
:
R
L
= 47 Ω, V
bb
= 12V, T
j
=-40...+150°C
t
on
t
off
--
--
--
--
50
55
µs
Slew rate on, 10 to 30% V
OUT
,
R
L
= 47 Ω, V
bb
= 12V, T
j
=-40...+150°C
dV /dt
on
1 -- 10 V/µs
Slew rate off, 10 to 30% V
OUT
,
R
L
= 47 Ω, V
bb
= 12V, T
j
=-40...+150°C
-dV/dt
off
2 -- 15 V/µs
Operating Parameters
Operating voltage
2
)
T
j
=-40...+150°C: V
bb(on)
4.7 -- 34 V
Operating voltage slew rate dV
bb
/dt -1 +1 V/µs
Undervoltage shutdown T
j
=25°C:
T
j
=-40...+150°C:
V
bb(under)
2.9
2.7
--
--
4.5
4.7
V
Undervoltage restart T
j
=-40...+150°C: V
bb(u rst)
-- -- 4.9 V
Undervoltage restart of charge pump
see diagram page 11 T
j
=-40...+150°C:
V
bb(ucp)
-- 4.9 7.5 V
Undervoltage hysteresis
∆V
bb(under)
= V
bb(u rst)
- V
bb(under)
∆V
bb(under)
-- 0.2 -- V
Overvoltage shutdown T
j
=-40...+150°C: V
bb(over)
34 -- 46 V
Overvoltage restart T
j
=-40...+150°C: V
bb(o rst)
34 -- -- V
Overvoltage hysteresis T
j
=-40...+150°C: ∆V
bb(over)
-- 0.5 -- V
Overvoltage protection
3
)
T
j
=-40...+150°C:
I
bb
=10 mA
V
bb(AZ)
59 70 -- V
Standby current (pin 3),
V
IN
=0 T
j
=-40...+150°C:
I
bb(off)
--
40 50
µA
Operating current (Pin 1)
4
)
, V
IN
=5 V
I
GND
-- 2 4 mA
2
)
At supply voltage increase up to V
bb
= 4.9 V typ without charge pump, V
OUT
≈V
bb
- 2 V
3
)
Meassured without load. See also V
ON(CL)
in table of protection functions and circuit diagram page 7.
4
)
Add I
ST
, if I
ST
> 0, add I
IN
, if V
IN
>5.5 V
P1-P3P4-P6P7-P9P10-P12P13-P14

BTS308 E3059

Mfr. #:
Buy BTS308 E3059
Manufacturer:
Infineon Technologies
Description:
IC SWITCH N-CH HI SIDE TO220-5
Lifecycle:
New from this manufacturer.
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