BTS 308
Semiconductor Group Page 9 2003-Oct-01
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and reverse
battery protection with 150 Ω in GND connection, protection against loss of ground
Type BTS
410D2 410E2 410G2 410H2 307 308
Logic version
D E G H
Overtemperature protection with hysteresis
T
j
>150 °C, latch function
10
)
11
)
T
j
>150 °C, with auto-restart on cooling
X
X
X
X
X
X
Short circuit to GND protection
switches off when V
ON
>3.5 V typ. and
V
bb
> 8 V typ
10
)
X
switches off when V
ON
>3.5 V typ. X
switches off when V
ON
>8.5 V typ.
10)
(when first turned on after approx. 0 µs)
Achieved through overtemperature protection
X X
X
X
Open load detection
in OFF-state with sensing current -- µA typ.
in ON-state with sensing voltage drop across
power transistor
X
X
X
X X X
Undervoltage shutdown with auto restart
X X X X X X
Overvoltage shutdown with auto restart
12
)
X X X X - X
Status feedback for
overtemperature
short circuit to GND
short to V
bb
open load
undervoltage
overvoltage
X
X
-
13)
X
X
X
X
X
-
13
)
X
-
-
X
-
-
13)
X
-
-
X
X
X
X
-
-
X
X
X
X
X
-
X
X
X
X
-
-
Status output type
CMOS
Open drain
X
X
X
X
X
X
Output negative voltage transient limit
(fast inductive load switch off)
to V
bb
- V
ON(CL)
X X X X X
Load current limit
high level (can handle loads with high inrush currents)
low level (better protection of application)
X X
X
X
X
X
Protection against loss of GND X X X X X X
10
)
Latch except when
V
bb
-V
OUT
< V
ON(SC)
after shutdown. In most cases
VOUT
= 0 V after shutdown (V
OUT
≠
0 V only if forced externally). So the device remains latched unless
V
bb
< V
ON(SC)
(see page 4). No latch
between turn on and t
d(SC)
.
11
)
With latch function. Reseted by a) Input low, b) Undervoltage
12
)
No auto restart after overvoltage in case of short circuit
13
)
Low resistance short V
bb
to output may be detected in ON-state by the no-load-detection
