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ACT108W-600D,135

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
ACT108W-600D
AC Thyristor power switch
15 June 2016 Product data sheet
1. General description
AC Thyristor power switch in a SOT223 surface-mountable plastic package with self-protective
capabilities against low and high energy transients
2. Features and benefits
• Common terminal on mounting base allows multiple ACTs on shared cooling pad
• Exclusive negative gate triggering
• Full cycle AC conduction
• High noise immunity
• Remote gate separates the gate driver from the effects of the load current
• Surface-mountable package
• Very sensitive gate for lowest gate trigger current
• Safe clamping of low energy over-voltage transients
• Self-protective turn-on during high energy voltage transients
3. Applications
• Fan motor circuits
• Pump motor circuits
• Lower-power highly inductive, resistive and safety loads
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 600 V
I
T(RMS)
RMS on-state current full sine wave; T
sp
≤ 112 °C; Fig. 1;
Fig. 2; Fig. 3
- - 0.8 A
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
- - 8.8 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 8 A
T
j
junction temperature - - 125 °C
V
PP
peak pulse voltage T
j
= 25 °C; non-repetitive, off-state;
Fig. 6
- - 2 kV
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 100 mA; LD+ G-;
T
j
= 25 °C; Fig. 10
0.5 - 5 mA
WeEn Semiconductors
ACT108W-600D
AC Thyristor power switch
ACT108W-600D All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 15 June 2016 2 / 16
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 100 mA; LD- G-;
T
j
= 25 °C; Fig. 10
0.5 - 5 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 12 - - 20 mA
V
T
on-state voltage I
T
= 1.1 A; T
j
= 25 °C; Fig. 13 - - 1.3 V
V
CL
clamping voltage I
CL
= 0.1 mA; t
p
= 1 ms; T
j
≤ 125 °C;
Fig. 14
650 - - V
Dynamic charateristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit; Fig. 15
300 - - V/µs
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 1 A;
dV
com
/dt = 15 V/µs; gate open circuit;
Fig. 16; Fig. 17
0.15 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 LD load
2 CM common
3 G gate
4 CM common
1 32
4
SC-73 (SOT223)
001aaj924
G
CM
LD
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
ACT108W-600D SC-73 plastic surface-mounted package with increased heatsink; 4
leads
SOT223
WeEn Semiconductors
ACT108W-600D
AC Thyristor power switch
ACT108W-600D All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 15 June 2016 3 / 16
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
- 600 V
I
T(RMS)
RMS on-state current full sine wave; T
sp
≤ 112 °C; Fig. 1; Fig. 2;
Fig. 3
- 0.8 A
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms - 8.8 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
- 8 A
I
2
t I
2
t for fusing t
p
= 10 ms; SIN - 0.32 A²s
dI
T
/dt rate of rise of on-state
current
I
G
= 10 mA - 50 A/µs
I
GM
peak gate current t = 20 μs - 1 A
P
GM
peak gate power - 2 W
P
G(AV)
average gate power over any 20 ms period - 0.1 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
V
PP
peak pulse voltage T
j
= 25 °C; non-repetitive, off-state; Fig. 6 - 2 kV
003aac803
0
0.2
0.4
0.6
0.8
1.0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
I
T(RMS)
(A)
(W)
P
tot
α
α
α = 180°
α = conduction angle
Fig. 1. Total power dissipation as a function of RMS on-state current; maximum values
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ACT108W-600D,135

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Buy ACT108W-600D,135
Manufacturer:
WeEn Semiconductors
Description:
Triacs AC THYRISTOR PWR SW
Lifecycle:
New from this manufacturer.
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